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Small Signal Field-Effect Transistor, 5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, MO-193C, TSOP-6
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
09X6427
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Newark | Mosfet, P Channel, -20V, -5A, Tsop-6, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI3469DV-T1-E3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.6080 | Buy Now |
DISTI #
57J5641
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Newark | P Channel Mosfet, -20V, 6.7A, Tsop, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:6.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI3469DV-T1-E3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4130 / $0.4870 | Buy Now |
DISTI #
SI3469DV-T1-E3
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Avnet Americas | Trans MOSFET P-CH 20V 5A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3469DV-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.2573 / $0.3269 | Buy Now |
DISTI #
SI3469DV-T1-E3
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TTI | MOSFET 20V 6.7A 0.03Ohm RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.3950 / $0.4280 | Buy Now |
DISTI #
SI3469DV-T1-E3
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Avnet Asia | Trans MOSFET P-CH 20V 5A 6-Pin TSOP T/R (Alt: SI3469DV-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days | 0 |
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$0.3125 / $0.3521 | Buy Now |
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SI3469DV-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI3469DV-T1-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, MO-193C, TSOP-6
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | MO-193C, TSOP-6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 0.03 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-193AA | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.14 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI3469DV-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI3469DV-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDC604P | P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -5.5A, 33mΩ, 3000-REEL | onsemi | SI3469DV-T1-E3 vs FDC604P |
FDC602P_NL | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3469DV-T1-E3 vs FDC602P_NL |
FDC602P | 5500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SUPERSOT-6 | Rochester Electronics LLC | SI3469DV-T1-E3 vs FDC602P |
SI3445DV | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3469DV-T1-E3 vs SI3445DV |
SI3445DV | 5500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | Rochester Electronics LLC | SI3469DV-T1-E3 vs SI3445DV |
SI3445DV_NL | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3469DV-T1-E3 vs SI3445DV_NL |
SI3469DV-T1-GE3 | Small Signal Field-Effect Transistor, 5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, MO-193C, TSOP-6 | Vishay Intertechnologies | SI3469DV-T1-E3 vs SI3469DV-T1-GE3 |
FDC604PD87Z | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3469DV-T1-E3 vs FDC604PD87Z |
SI3445DVD87Z | Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | SI3469DV-T1-E3 vs SI3445DVD87Z |
FDC602P | P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ, 3000-REEL | onsemi | SI3469DV-T1-E3 vs FDC602P |