Datasheets
SI9410BDY-T1-GE3 by:

Small Signal Field-Effect Transistor, 6.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Part Details for SI9410BDY-T1-GE3 by Vishay Intertechnologies

Overview of SI9410BDY-T1-GE3 by Vishay Intertechnologies

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Part Details for SI9410BDY-T1-GE3

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SI9410BDY-T1-GE3 Part Data Attributes

SI9410BDY-T1-GE3 Vishay Intertechnologies
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SI9410BDY-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 6.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SOP-8
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6.2 A
Drain-source On Resistance-Max 0.024 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish PURE MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for SI9410BDY-T1-GE3

This table gives cross-reference parts and alternative options found for SI9410BDY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI9410BDY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI9410BDY-T1-E3 Small Signal Field-Effect Transistor, 6.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies SI9410BDY-T1-GE3 vs SI9410BDY-T1-E3
SI9410BDY Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Intertechnologies SI9410BDY-T1-GE3 vs SI9410BDY
SI9410BDY-T1-GE3 TRANSISTOR 6200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix SI9410BDY-T1-GE3 vs SI9410BDY-T1-GE3
SI9410BDY Small Signal Field-Effect Transistor, 6.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI9410BDY-T1-GE3 vs SI9410BDY
Part Number Description Manufacturer Compare
SI9410DY Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI9410BDY-T1-GE3 vs SI9410DY
SI6434DQ Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Vishay Siliconix SI9410BDY-T1-GE3 vs SI6434DQ
FDS6614AL86Z Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI9410BDY-T1-GE3 vs FDS6614AL86Z
FDS9412L86Z Small Signal Field-Effect Transistor, 7.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI9410BDY-T1-GE3 vs FDS9412L86Z
PHN103T TRANSISTOR 8600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SO-8, FET General Purpose Small Signal NXP Semiconductors SI9410BDY-T1-GE3 vs PHN103T
NDH8436X 5800mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-8 Texas Instruments SI9410BDY-T1-GE3 vs NDH8436X
934056038118 TRANSISTOR 8600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Small Signal NXP Semiconductors SI9410BDY-T1-GE3 vs 934056038118
BSO220N03MSG Small Signal Field-Effect Transistor, 6.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-8 Infineon Technologies AG SI9410BDY-T1-GE3 vs BSO220N03MSG
SI4412DYL99Z Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI9410BDY-T1-GE3 vs SI4412DYL99Z
SI9410BDY-T1-E3 Small Signal Field-Effect Transistor, 6.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies SI9410BDY-T1-GE3 vs SI9410BDY-T1-E3

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