Part Details for SIHB22N60EL-GE3 by Vishay Intertechnologies
Overview of SIHB22N60EL-GE3 by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for SIHB22N60EL-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHB22N60EL-GE3
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Avnet Americas | Trans MOSFET N-CH 600V 21A 3-Pin D2PAK - Tape and Reel (Alt: SIHB22N60EL-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$2.1600 / $2.7440 | Buy Now |
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DISTI #
78-SIHB22N60EL-GE3
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Mouser Electronics | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant | 0 |
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$2.0700 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 | 0 |
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$2.1400 | Buy Now |
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DISTI #
SIHB22N60EL-GE3
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TTI | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel | Americas - 0 |
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$2.0500 / $2.3700 | Buy Now |
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DISTI #
SIHB22N60EL-GE3
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TME | Transistor: N-MOSFET, unipolar, 600V, 13A, Idm: 45A, 227W Min Qty: 1 | 0 |
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$3.1500 / $4.7300 | RFQ |
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DISTI #
SIHB22N60EL-GE3
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EBV Elektronik | (Alt: SIHB22N60EL-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 23 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHB22N60EL-GE3
SIHB22N60EL-GE3 CAD Models
SIHB22N60EL-GE3 Part Data Attributes:
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SIHB22N60EL-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHB22N60EL-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 286 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.197 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 45 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHB22N60EL-GE3
This table gives cross-reference parts and alternative options found for SIHB22N60EL-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHB22N60EL-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHP21N65EF-GE3 | Power Field-Effect Transistor, 21A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SIHB22N60EL-GE3 vs SIHP21N65EF-GE3 |
| SIHP22N60EL-GE3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SIHB22N60EL-GE3 vs SIHP22N60EL-GE3 |
| SPP20N60C3HKSA1 | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHB22N60EL-GE3 vs SPP20N60C3HKSA1 |
| SIHP22N65E-GE3 | Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SIHB22N60EL-GE3 vs SIHP22N65E-GE3 |
| SIHP21N60EF-GE3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SIHB22N60EL-GE3 vs SIHP21N60EF-GE3 |
| SIHG21N65EF-GE3 | Power Field-Effect Transistor, 21A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SIHB22N60EL-GE3 vs SIHG21N65EF-GE3 |
| SIHG22N60EL-GE3 | Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SIHB22N60EL-GE3 vs SIHG22N60EL-GE3 |
| SIHB22N65E-GE3 | Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Vishay Intertechnologies | SIHB22N60EL-GE3 vs SIHB22N65E-GE3 |
| IPW60R190C6XK | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SIHB22N60EL-GE3 vs IPW60R190C6XK |
| STW28N65M2 | N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package | STMicroelectronics | SIHB22N60EL-GE3 vs STW28N65M2 |