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Transistors Power Field-Effect Transistors SIHFR9024TR-GE3

SIHFR9024TR-GE3
Description: Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,

Overview of SIHFR9024TR-GE3 by Vishay Intertechnologies

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Price & Stock for SIHFR9024TR-GE3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # SIHFR9024TR-GE3
Avnet Americas MOSFET P-CHANNEL 60V - Tape and Reel (Alt: SIHFR9024TR-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 2,000 $0.2750
$0.2750 Buy Now
DISTI # 78-SIHFR9024TR-GE3
Mouser Electronics MOSFETs -60V Vds 20V Vgs DPAK (TO-252) RoHS: Compliant 2340
  • 1 $0.8500
  • 10 $0.7350
  • 100 $0.5090
  • 500 $0.4260
  • 1,000 $0.3700
  • 2,000 $0.3290
  • 4,000 $0.3040
  • 10,000 $0.2820
$0.2820 / $0.8500 Buy Now
Future Electronics MOSFETs -60V Vds 20V Vgs DPAK (TO-252) RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks Container: Reel 0
Reel
  • 2,000 $0.3050
  • 4,000 $0.3000
  • 6,000 $0.2950
  • 8,000 $0.2950
  • 10,000 $0.2850
$0.2850 / $0.3050 Buy Now
DISTI # SIHFR9024TR-GE3
TTI MOSFETs -60V Vds 20V Vgs DPAK (TO-252) RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel Americas - 0
  • 2,000 $0.3170
  • 4,000 $0.2980
  • 6,000 $0.2900
  • 10,000 $0.2800
$0.2800 / $0.3170 Buy Now
DISTI # SIHFR9024TR-GE3
TME Transistor: P-MOSFET, unipolar, -60V, -5.6A, Idm: -35A, 42W Min Qty: 1 0
  • 1 $0.8020
  • 5 $0.6310
  • 25 $0.5570
  • 100 $0.5010
  • 500 $0.4680
$0.4680 / $0.8020 RFQ
DISTI # SIHFR9024TR-GE3
EBV Elektronik Transistor MOSFET P-CH 60V 8.8A 3-Pin TO-252 T/R (Alt: SIHFR9024TR-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for SIHFR9024TR-GE3 by Vishay Intertechnologies
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Part Data Attributes for SIHFR9024TR-GE3 by Vishay Intertechnologies
Parametric Data

SIHFR9024TR-GE3
Vishay Intertechnologies
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
13 Weeks
Samacsys Manufacturer
Vishay
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
300 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
8.8 A
Drain-source On Resistance-Max
0.28 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
42 W
Pulsed Drain Current-Max (IDM)
35 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. SIHFR9024TR-GE3
    Vishay Intertechnologies
    Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
    VS

Alternate Parts for SIHFR9024TR-GE3

This table gives cross-reference parts and alternative options found for SIHFR9024TR-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFR9024TR-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFR9024TRR Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier SIHFR9024TR-GE3 vs IRFR9024TRR
IRFR9024PBF Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix SIHFR9024TR-GE3 vs IRFR9024PBF
IRFR9024 Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation SIHFR9024TR-GE3 vs IRFR9024
IRFR9024TRRPBF Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies SIHFR9024TR-GE3 vs IRFR9024TRRPBF
IRFR9024TR Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix SIHFR9024TR-GE3 vs IRFR9024TR
IRFR9024TRRPBF TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix SIHFR9024TR-GE3 vs IRFR9024TRRPBF
IRFR9024TRPBF Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies SIHFR9024TR-GE3 vs IRFR9024TRPBF
IRFR9024TRLPBF TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix SIHFR9024TR-GE3 vs IRFR9024TRLPBF
IRFR9024TRPBF TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix SIHFR9024TR-GE3 vs IRFR9024TRPBF
SIHFR9024-GE3 TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix SIHFR9024TR-GE3 vs SIHFR9024-GE3
Part Number Description Manufacturer Compare
IRFR9024TRLPBF TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix SIHFR9024TR-GE3 vs IRFR9024TRLPBF
IRFR9024PBF Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier SIHFR9024TR-GE3 vs IRFR9024PBF
IRFR9024TRPBF Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies SIHFR9024TR-GE3 vs IRFR9024TRPBF
IRFR9024TRRPBF Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies SIHFR9024TR-GE3 vs IRFR9024TRRPBF
IRFR9024TRPBF TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix SIHFR9024TR-GE3 vs IRFR9024TRPBF
IRFR9024TRPBF Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier SIHFR9024TR-GE3 vs IRFR9024TRPBF
SIHFR9024TL TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General Purpose Power Vishay Siliconix SIHFR9024TR-GE3 vs SIHFR9024TL
IRFR9024PBF Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix SIHFR9024TR-GE3 vs IRFR9024PBF
IRFR9024 Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation SIHFR9024TR-GE3 vs IRFR9024
IRFR9024 Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier SIHFR9024TR-GE3 vs IRFR9024

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