Part Details for SQ1216C by Msi Electronics Inc
Overview of SQ1216C by Msi Electronics Inc
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Applications
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Industrial Automation
Smart Cities
Transportation and Logistics
Agriculture Technology
Medical Imaging
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Consumer Electronics
Education and Research
Security and Surveillance
Audio and Video Systems
Aerospace and Defense
Healthcare
Renewable Energy
Robotics and Drones
Part Details for SQ1216C
SQ1216C CAD Models
SQ1216C Part Data Attributes:
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SQ1216C
Msi Electronics Inc
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SQ1216C
Msi Electronics Inc
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 3.3pF C(T), 30V, Silicon, Abrupt
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MSI ELECTRONICS INC | |
| Package Description | O-LALF-W2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Additional Feature | VERY HIGH Q | |
| Breakdown Voltage-Min | 30 V | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Cap Tolerance | 2% | |
| Diode Capacitance Ratio-Min | 2.5 | |
| Diode Capacitance-Nom | 3.3 pF | |
| Diode Element Material | SILICON | |
| Diode Type | VARIABLE CAPACITANCE DIODE | |
| Frequency Band | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | |
| JESD-30 Code | O-LALF-W2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Power Dissipation-Max | 0.25 W | |
| Qualification Status | Not Qualified | |
| Quality Factor-Min | 1200 | |
| Rep Pk Reverse Voltage-Max | 30 V | |
| Reverse Current-Max | 2e-8 µA | |
| Reverse Test Voltage | 25 V | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | AXIAL | |
| Variable Capacitance Diode Classification | ABRUPT |