Part Details for STAC2943 by STMicroelectronics
Results Overview of STAC2943 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Aerospace and Defense
Agriculture Technology
Robotics and Drones
STAC2943 Information
STAC2943 by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STAC2943
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET | 12867 |
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RFQ |
STAC2943 Part Data Attributes
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STAC2943
STMicroelectronics
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Datasheet
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STAC2943
STMicroelectronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| ECCN Code | EAR99 | |
| Case Connection | Source | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 130 V | |
| Drain Current-Max (ID) | 40 A | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 35 Pf | |
| Highest Frequency Band | Ultra High Frequency Band | |
| JESD-30 Code | R-CDFM-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | Ceramic, Metal-Sealed Cofired | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Packing Method | Tray | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 795 W | |
| Power Gain-Min (Gp) | 22 Db | |
| Surface Mount | No | |
| Terminal Form | Flat | |
| Terminal Position | Dual | |
| Transistor Application | Amplifier | |
| Transistor Element Material | Silicon |