| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SIHP33N60E-GE3 | Vishay Intertechnologies | $2.7388 | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STB36NM60ND vs SIHP33N60E-GE3 |
| SIHB33N60EF-GE3 | Vishay Intertechnologies | $3.3411 | Power Field-Effect Transistor, 33A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STB36NM60ND vs SIHB33N60EF-GE3 |
| IPW60R099P6XKSA1 | Infineon Technologies AG | $3.8811 | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | STB36NM60ND vs IPW60R099P6XKSA1 |
| IPW60R099CPFKSA1 | Infineon Technologies AG | $4.1469 | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | STB36NM60ND vs IPW60R099CPFKSA1 |
| IPW60R099CPAFKSA1 | Infineon Technologies AG | $6.9290 | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | STB36NM60ND vs IPW60R099CPAFKSA1 |
| IPI60R099CP | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | STB36NM60ND vs IPI60R099CP |
| IPB65R110CFD | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STB36NM60ND vs IPB65R110CFD |
| TK25Z60X | Toshiba America Electronic Components | Check for Price | Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | STB36NM60ND vs TK25Z60X |
| IPW60R099CS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | STB36NM60ND vs IPW60R099CS |
| IPB60R125CPXT | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STB36NM60ND vs IPB60R125CPXT |
Part Details for STB36NM60ND by STMicroelectronics
Results Overview of STB36NM60ND by STMicroelectronics
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STB36NM60ND Information
STB36NM60ND by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STB36NM60ND
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-13861-6-ND
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DigiKey | MOSFET N-CH 600V 29A D2PAK Min Qty: 1 Container: Digi-Reel |
0 Digi-Reel® |
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$3.5070 / $7.1300 | Buy Now |
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DISTI #
497-13861-1-ND
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DigiKey | MOSFET N-CH 600V 29A D2PAK Container: Cut Tape |
0 Cut Tape |
|
Buy Now | |
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DISTI #
497-13861-2-ND
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DigiKey | MOSFET N-CH 600V 29A D2PAK Container: Tape & Reel |
0 Tape & Reel |
|
Buy Now | |
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ComSIT USA | 600 V, 29 A, 0.097 OHM TYP FDMESH II N-CHANNEL POWER MOSFET (WITH FAST DIODE) IN D2PAK PACKAGE Power Field-Effect Transistor, 29A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 11485 |
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RFQ | |
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Chip Stock | STB36NM60ND N-channel MOSFET Transistor, 29 A, 600 V, 3-Pin D2PAK | 8500 |
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RFQ |
STB36NM60ND CAD Models
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3D Model
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STB36NM60ND Part Data Attributes
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STB36NM60ND
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STB36NM60ND
STMicroelectronics
Power Field-Effect Transistor, 29A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 100 Mj | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 29 A | |
| Drain-source On Resistance-Max | 0.0011 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 190 W | |
| Pulsed Drain Current-Max (IDM) | 1.3 A | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STB36NM60ND
This table gives cross-reference parts and alternative options found for STB36NM60ND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB36NM60ND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STB36NM60ND Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STB36NM60ND is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.
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The recommended gate drive voltage for the STB36NM60ND is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the STB36NM60ND from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the PCB is designed with ESD protection in mind.
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The maximum allowed current for the STB36NM60ND is 36A, with a maximum pulsed current of 72A.