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STDRIVEG210Q by: STMicroelectronics

2.4A

Part Details for STDRIVEG210Q by STMicroelectronics

Results Overview of STDRIVEG210Q by STMicroelectronics

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STDRIVEG210Q Information

STDRIVEG210Q by STMicroelectronics is an MOSFET Driver.
MOSFET Drivers are under the broader part category of Drivers And Interfaces.

A driver controls the current or voltage delivered to components like LCDs or motors, while an interface component connects systems for data transfer and control. Read more about Drivers And Interfaces on our Drivers And Interfaces part category page.

Price & Stock for STDRIVEG210Q

Part # Distributor Description Stock Price Buy
DISTI # 46AM3157
Newark Gate Driver, Gan, 2-Channel, Qfn-18 Rohs Compliant: Yes |Stmicroelectronics STDRIVEG210Q RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 300
  • 1 $2.7900
  • 10 $2.4100
  • 25 $2.1100
  • 50 $1.9800
  • 100 $1.7200
  • 250 $1.4400
  • 980 $1.4000
$1.4000 / $2.7900 Buy Now
DISTI # 497-STDRIVEG210Q-ND
DigiKey MOTION CONTROL & AUTOMATION Min Qty: 1 Lead time: 99 Weeks Container: Tray 700
In Stock
  • 1 $2.6600
  • 10 $1.9820
  • 25 $1.8124
  • 100 $1.6258
  • 250 $1.5370
  • 500 $1.4834
  • 1,000 $1.4393
  • 4,900 $1.3655
$1.3655 / $2.6600 Buy Now
DISTI # STDRIVEG210Q
Avnet Americas Gate Driver, 2 Channels, Non-Isolated, Half Bridge, GaN Power Switch, 18 Pins, QFN - Trays (Alt: STDRIVEG210Q) COO: Taiwan (Province of China) RoHS: Not Compliant Min Qty: 4900 Package Multiple: 4900 Container: Tray 0
  • 4,900 $1.4454
  • 9,800 $1.3673
  • 19,600 $1.3328
  • 39,200 $1.3260
  • 78,400 $1.3192
$1.3192 / $1.4454 Buy Now
DISTI # 511-STDRIVEG210Q
Mouser Electronics Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches 220V RoHS: Compliant 672
  • 1 $2.6600
  • 10 $1.9900
  • 25 $1.8200
  • 100 $1.6300
  • 250 $1.5400
  • 490 $1.4800
  • 980 $1.4300
  • 2,940 $1.3600
$1.3600 / $2.6600 Buy Now
STMicroelectronics 220 V high-speed half-bridge gate driver for GaN power switches COO: Singapore RoHS: Compliant Min Qty: 1 672
  • 1 $2.6100
  • 10 $1.9500
  • 25 $1.7800
  • 100 $1.6000
  • 250 $1.5100
  • 490 $1.4500
$1.4500 / $2.6100 Buy Now
Future Electronics 18 V 2.4 A High-Speed Half-Bridge Gate Driver for GaN Power Switch - QFN-18 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $1.5200
$1.5200 Buy Now
DISTI # STDRIVEG210Q
EBV Elektronik Gate Driver 2 Channels NonIsolated Half Bridge GaN Power Switch 18 Pins QFN (Alt: STDRIVEG210Q) RoHS: Compliant Min Qty: 490 Package Multiple: 490 Lead time: 53 Weeks, 0 Days EBV - 0
Buy Now

US Tariff Estimator: STDRIVEG210Q by STMicroelectronics

Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.

STDRIVEG210Q
STMicroelectronics
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Part Details for STDRIVEG210Q

STDRIVEG210Q CAD Models

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STDRIVEG210Q Part Data Attributes

Parametric Data
STDRIVEG210Q STMicroelectronics
Buy Now Datasheet
Compare Parts:
STDRIVEG210Q STMicroelectronics 2.4A
Part Life Cycle Code Active
Package Description Qccn, Lcc18,.16x.2,20
Reach Compliance Code Unknown
ECCN Code EAR99
HTS Code 8542.39.00.60
High Side Driver Yes
Input Characteristics Schmitt Trigger
Interface IC Type Half Bridge Based Gan Fet Driver
JESD-30 Code R-XQCC-N18
Length 5 Mm
Number of Functions 1
Number of Terminals 18
Operating Temperature-Max 125 °C
Operating Temperature-Min -40 °C
Output Characteristics Push-Pull
Output Peak Current Limit-Nom 2.4 A
Output Polarity True
Package Body Material Unspecified
Package Code QCCN
Package Equivalence Code LCC18,.16X.2,20
Package Shape Rectangular
Package Style Chip Carrier
Seated Height-Max 1.047 Mm
Supply Current-Max 3.45 Ma
Supply Voltage-Max 20 V
Supply Voltage-Min 7.5 V
Supply Voltage-Nom 12 V
Supply Voltage1-Max 20 V
Supply Voltage1-Min 7.5 V
Supply Voltage1-Nom 12 V
Surface Mount Yes
Terminal Form No Lead
Terminal Pitch 0.5 Mm
Terminal Position Quad
Turn-off Time 0.06 µS
Turn-on Time 0.06 µS
Width 4 Mm
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