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Part Details for STF18N65DM2 by STMicroelectronics
Results Overview of STF18N65DM2 by STMicroelectronics
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
STF18N65DM2 Information
STF18N65DM2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STF18N65DM2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-STF18N65DM2-ND
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DigiKey | DISCRETE Min Qty: 1000 Container: Bulk |
0 Bulk |
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$1.2663 | Buy Now |
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DISTI #
STF18N65DM2
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Avnet Americas | - Tape and Reel (Alt: STF18N65DM2) COO: China RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Tape & Reel | 0 |
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$1.2284 / $1.2537 | Buy Now |
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DISTI #
511-STF18N65DM2
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Mouser Electronics | MOSFETs N-channel 650 V, 231 mOhm typ., 12 A, MDmesh DM2 Power MOSFET in a TO-220FP pack RoHS: Compliant | 0 |
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$1.1700 / $1.2600 | Order Now |
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DISTI #
STF18N65DM2
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Avnet Silica | (Alt: STF18N65DM2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 19 Weeks, 0 Days | Silica - 0 |
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RFQ |
Part Details for STF18N65DM2
STF18N65DM2 CAD Models
STF18N65DM2 Part Data Attributes
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STF18N65DM2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STF18N65DM2
STMicroelectronics
Power Field-Effect Transistor, 12A I(D), 650V, 0.295ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | To-220fp, 3 Pin | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Avalanche Energy Rating (Eas) | 482 Mj | |
| Case Connection | Isolated | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.295 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 0.45 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 28 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |