Part Details for STF2LN60K3 by STMicroelectronics
Results Overview of STF2LN60K3 by STMicroelectronics
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STF2LN60K3 Information
STF2LN60K3 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STF2LN60K3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-13396-5-ND
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DigiKey | MOSFET N CH 600V 2A TO-220FP Min Qty: 1 Container: Tube |
857 Tube |
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$0.5786 / $1.7400 | Buy Now |
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DISTI #
511-STF2LN60K3
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Mouser Electronics | MOSFETs N-Ch 600V 4ohm 2A SuperMESH3 FET RoHS: Compliant | 1230 |
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$0.4770 / $1.7100 | Buy Now |
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Bristol Electronics | Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 1 | 950 |
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$0.3551 / $1.2683 | Buy Now |
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Quest Components | 760 |
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$0.4397 / $1.6910 | Buy Now | |
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Quest Components | 760 |
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$0.8116 / $2.0290 | Buy Now | |
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ComSIT USA | 600 V, 2 A, 4 OHM TYP SUPERMESH3 N-CHANNEL POWER MOSFET IN TO-220FP PACKAGE Power Field-Effect Transistor, 2A I(D), 600V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ECCN: EAR99 RoHS: Compliant |
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RFQ |
STF2LN60K3 Part Data Attributes
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STF2LN60K3
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STF2LN60K3
STMicroelectronics
Power Field-Effect Transistor, 2A I(D), 600V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | To-220fp, 3 Pin | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 80 Mj | |
| Case Connection | Isolated | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 4.5 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 3.5 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Surface Mount | No | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
STF2LN60K3 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the STF2LN60K3 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and to ensure that the device does not exceed its maximum junction temperature (Tj) of 150°C.
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To ensure the STF2LN60K3 is properly biased for optimal performance, follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the gate-source voltage (Vgs) to the recommended value (e.g., 10V) and ensuring that the drain-source voltage (Vds) is within the specified range. Additionally, ensure that the device is operated within its specified current and power ratings.
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The recommended PCB layout and thermal management strategy for the STF2LN60K3 involves using a multi-layer PCB with a solid ground plane, placing the device near a heat sink or thermal pad, and ensuring good thermal conductivity between the device and the heat sink. Additionally, consider using thermal vias and a thermal interface material (TIM) to improve heat dissipation. Consult the datasheet and application notes for more detailed guidance.
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To protect the STF2LN60K3 from electrostatic discharge (ESD), follow proper handling and storage procedures, such as using an ESD wrist strap or mat, and storing the devices in anti-static packaging. Additionally, ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, and that the device is properly grounded during assembly and testing.
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The reliability and lifetime expectations for the STF2LN60K3 are dependent on various factors, including operating conditions, environmental factors, and manufacturing quality. Consult the datasheet and reliability reports for more information on the device's expected lifetime and reliability. Additionally, consider performing accelerated life testing and reliability testing to ensure the device meets your specific application requirements.