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Part Details for STF45N10F7 by STMicroelectronics
Results Overview of STF45N10F7 by STMicroelectronics
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STF45N10F7 Information
STF45N10F7 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STF45N10F7
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-14555-5-ND
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DigiKey | MOSFET N-CH 100V 30A TO220FP Min Qty: 1 Lead time: 56 Weeks Container: Tube |
36 In Stock |
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$0.9187 / $3.2200 | Buy Now |
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DISTI #
70520580
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RS | STF45N10F7 N-CHANNEL MOSFET TRANSISTOR, 110 A, 100 V, 3-PIN TO-220FP Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$1.3300 / $1.4800 | RFQ |
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STMicroelectronics | N-channel 100 V, 0.0145 Ohm typ., 30 A STripFET F7 Power MOSFET in TO-220FP package COO: China RoHS: Compliant Min Qty: 1 | 37 |
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$1.2300 / $2.0500 | Buy Now |
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Future Electronics | N-Channel 100 V 18 mOhm STripFET VII DeepGATE Power Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 1 Container: Tube | 900Tube |
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$0.6500 / $0.7300 | Buy Now |
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ComSIT USA | 100 V, 120 A, 0.006 OHM TYP STRIPFET VII DEEPGATE N-CHANNEL POWER MOSFET IN TO-220FP PACKAGE Power Field-Effect Transistor ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
STF45N10F7
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IBS Electronics | STF45N10F7 by STMicroelectronics is an N-Channel 100V 18mOhm STripFET VII DeepGATE Power MOSFET in a TO-220 package, ideal for high-efficiency power management applications. Min Qty: 1 Package Multiple: 5 | 900 |
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$0.9116 / $1.0238 | Buy Now |
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Chip Stock | 2000 |
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RFQ | ||
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Sense Electronic Company Limited | TO-220F | 1664 |
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RFQ |
Part Details for STF45N10F7
STF45N10F7 CAD Models
STF45N10F7 Part Data Attributes
STF45N10F7 Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) for the STF45N10F7 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
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The thermal resistance of the STF45N10F7 can be calculated using the thermal resistance values provided in the datasheet. The junction-to-case thermal resistance (RthJC) is 1.5°C/W, and the case-to-ambient thermal resistance (RthCA) is dependent on the specific heat sink and cooling system used. You can use the following formula: RthJA = RthJC + RthCA.
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The recommended gate drive voltage for the STF45N10F7 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
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Yes, the STF45N10F7 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic capacitances when designing the circuit. You may need to use a gate driver with a high current capability and a low impedance layout to minimize switching losses.
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To ensure the reliability of the STF45N10F7 in a high-power application, it's essential to follow proper design and layout guidelines, such as using a heat sink, minimizing thermal resistance, and ensuring proper cooling. Additionally, you should consider using a robust gate driver, a high-quality PCB, and a reliable power supply. It's also recommended to perform thorough testing and validation of the design.