Part Details for STH6N100 by STMicroelectronics
Results Overview of STH6N100 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STH6N100 Information
STH6N100 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STH6N100
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 6A I(D), 1000V, 2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-218 | 10 |
|
$12.0000 / $16.0000 | Buy Now |
US Tariff Estimator: STH6N100 by STMicroelectronics
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
STH6N100 Part Data Attributes
|
|
STH6N100
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STH6N100
STMicroelectronics
Power Field-Effect Transistor, 6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218
|
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-218 | |
| Package Description | Sot-93, To-218, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 850 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 130 Pf | |
| JEDEC-95 Code | TO-218 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation Ambient-Max | 180 W | |
| Power Dissipation-Max (Abs) | 180 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-on Time-Max (ton) | 120 Ns |