Part Details for STI40N65M2 by STMicroelectronics
Results Overview of STI40N65M2 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STI40N65M2 Information
STI40N65M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STI40N65M2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-15552-5-ND
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DigiKey | MOSFET N-CH 650V 32A I2PAK Min Qty: 1 Container: Tube |
811 Tube |
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$2.0625 / $4.6400 | Buy Now |
STI40N65M2 Part Data Attributes
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STI40N65M2
STMicroelectronics
Buy Now
Datasheet
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STI40N65M2
STMicroelectronics
Power Field-Effect Transistor, 32A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | I2pak-3 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 820 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 32 A | |
| Drain-source On Resistance-Max | 0.099 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 2.7 Pf | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | In-Line | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 128 A | |
| Surface Mount | No | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
STI40N65M2 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the STI40N65M2 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be defined as the region where the device can operate without exceeding its maximum ratings. For the STI40N65M2, this would typically be limited by the maximum junction temperature (Tj) of 175°C, the maximum drain-source voltage (Vds) of 650V, and the maximum drain current (Id) of 40A.
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To ensure proper cooling of the STI40N65M2, it is essential to provide a good thermal interface between the device and the heat sink. This can be achieved by applying a thin layer of thermal interface material (TIM) to the device's exposed thermal pad, and then attaching a heat sink with a suitable thermal conductivity. The heat sink should be designed to provide adequate airflow or convection to dissipate the heat generated by the device. Additionally, the PCB layout should be designed to minimize thermal resistance and ensure good heat spreading.
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The recommended gate drive voltage for the STI40N65M2 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can help to reduce the device's switching losses and improve its overall efficiency. However, it is essential to ensure that the gate drive voltage does not exceed the maximum gate-source voltage (Vgs) rating of 20V to prevent damage to the device.
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To protect the STI40N65M2 from overvoltage and overcurrent conditions, it is recommended to use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit in the design. The OVP circuit should be designed to detect voltage transients and clamp the voltage to a safe level, while the OCP circuit should be designed to detect excessive current and disconnect the power supply or limit the current to a safe level. Additionally, the design should include a suitable thermal protection circuit to prevent overheating of the device.
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The recommended PCB layout and spacing for the STI40N65M2 should be designed to minimize parasitic inductance and capacitance, and to ensure good thermal dissipation. The device's pins should be spaced at least 1.5mm apart to prevent electrical arcing and to ensure reliable operation. The PCB layout should also be designed to minimize electromagnetic interference (EMI) and to ensure compliance with relevant electromagnetic compatibility (EMC) standards.