Part Details for STL26N65DM2 by STMicroelectronics
Results Overview of STL26N65DM2 by STMicroelectronics
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STL26N65DM2 Information
STL26N65DM2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STL26N65DM2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
11AN9721
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Newark | Mosfet, N-Ch, 650V, 20A, Powerflat Hv, |Stmicroelectronics STL26N65DM2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$2.4700 / $4.6800 | Buy Now |
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DISTI #
STL26N65DM2-ND
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DigiKey | MOSFET N-CH 650V 20A PWRFLAT HV Min Qty: 3000 Container: Tape & Reel |
0 Tape & Reel |
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$1.8015 | Buy Now |
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DISTI #
511-STL26N65DM2
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Mouser Electronics | MOSFETs N-channel 650 V, 0.182 Ohm typ., 20 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 RoHS: Compliant | 0 |
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$1.6900 | Order Now |
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DISTI #
STL26N65DM2
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TME | Transistor: N-MOSFET, unipolar, 650V, 20A, Idm: 53A, 140W Min Qty: 1 | 0 |
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$2.0700 / $3.6500 | RFQ |
STL26N65DM2 CAD Models
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STL26N65DM2 Part Data Attributes
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STL26N65DM2
STMicroelectronics
Buy Now
Datasheet
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STL26N65DM2
STMicroelectronics
Power Field-Effect Transistor, 20A I(D), 650V, 0.206ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified |
STL26N65DM2 Frequently Asked Questions (FAQ)
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The maximum operating junction temperature of the STL26N65DM2 is 175°C, as specified in the datasheet. However, it's recommended to derate the power dissipation to ensure reliable operation and prevent thermal runaway.
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To ensure proper biasing, make sure to follow the recommended operating conditions and biasing schemes outlined in the datasheet. This includes setting the gate-source voltage (Vgs) within the recommended range, typically between 2V to 10V, and ensuring the drain-source voltage (Vds) is within the maximum rating.
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For optimal thermal performance, it's recommended to use a PCB layout that provides good thermal conductivity and heat dissipation. This includes using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using thermal vias to dissipate heat to the other side of the board. Additionally, ensure good airflow around the device and consider using a heat sink if necessary.
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To protect the STL26N65DM2 from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. During PCB assembly, ensure that the device is handled and soldered in an ESD-controlled environment. Additionally, consider adding ESD protection devices, such as TVS diodes, to the PCB design.
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The STL26N65DM2 is a high-reliability device with a typical lifespan of 10 to 15 years or more, depending on the operating conditions and environmental factors. However, it's essential to follow proper design, manufacturing, and testing procedures to ensure the device meets the required reliability standards.