| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STN4NF03L | STMicroelectronics | $0.4120 | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STN2NE10 vs STN4NF03L |
| FDT459N_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STN2NE10 vs FDT459N_NL |
| STN3NE06L | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 3A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STN2NE10 vs STN3NE06L |
| STN2NE06 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 2A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STN2NE10 vs STN2NE06 |
| FDT457N_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STN2NE10 vs FDT457N_NL |
| STE45N50 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 45A I(D), 0.11ohm, 1-Element, Silicon, Metal-oxide Semiconductor FET | STN2NE10 vs STE45N50 |
| STN1NB80 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 0.2A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STN2NE10 vs STN1NB80 |
Part Details for STN2NE10 by STMicroelectronics
Results Overview of STN2NE10 by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (7 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STN2NE10 Information
STN2NE10 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STN2NE10
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
STN2NE10-ND
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DigiKey | MOSFET N-CH 100V 2A SOT-223 Min Qty: 4000 Container: Tape & Reel |
0 Tape & Reel |
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$0.3000 / $0.3333 | Buy Now |
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Vyrian | Power Field-Effect Transistor, 2A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5409 |
|
RFQ |
STN2NE10 Part Data Attributes
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STN2NE10
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STN2NE10
STMicroelectronics
Power Field-Effect Transistor, 2A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | SOT-223 | |
| Package Description | Sot-223, 4 Pin | |
| Pin Count | 4 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 20 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 21 Pf | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STN2NE10
This table gives cross-reference parts and alternative options found for STN2NE10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STN2NE10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STN2NE10 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STN2NE10 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within the -40°C to 125°C range for optimal performance and reliability.
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To ensure proper biasing, follow the recommended operating conditions in the datasheet, including the voltage supply (VCC) and current (ICC) ratings. Additionally, ensure the input and output pins are properly terminated and matched to the recommended impedance.
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For optimal performance, follow the recommended PCB layout guidelines in the datasheet, including keeping the signal traces short and away from noise sources, using a solid ground plane, and ensuring proper decoupling and bypassing of the power supply.
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To prevent electrostatic discharge (ESD) damage, handle the STN2NE10 with ESD-safe equipment and follow proper ESD protection procedures, such as using an ESD wrist strap or mat, and storing the device in an ESD-safe package.
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For characterizing the STN2NE10, use high-frequency test equipment such as a vector network analyzer, signal generator, and oscilloscope. Ensure the equipment is calibrated and configured according to the manufacturer's instructions and the STN2NE10's datasheet specifications.