Datasheets
STP10NM60N by:

N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in TO-220 package

Part Details for STP10NM60N by STMicroelectronics

Overview of STP10NM60N by STMicroelectronics

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for STP10NM60N

Part # Distributor Description Stock Price Buy
DISTI # 25R9471
Newark N Channel Power Mosfet, Mdmesh Ii, 600V, 8A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:10A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Power Dissipation:70W, Msl:- Rohs Compliant: Yes |Stmicroelectronics STP10NM60N Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 497-9098-5-ND
DigiKey MOSFET N-CH 600V 10A TO220AB Min Qty: 1 Lead time: 16 Weeks Container: Tube 1194
In Stock
  • 1 $3.0200
  • 50 $2.3972
  • 100 $2.0547
  • 500 $1.8264
  • 1,000 $1.5639
  • 2,000 $1.4725
  • 5,000 $1.4127
$1.4127 / $3.0200 Buy Now
DISTI # 511-STP10NM60N
Mouser Electronics MOSFET N-channel 600 V Mdmesh 8A RoHS: Compliant 1814
  • 1 $2.7700
  • 10 $2.4900
  • 25 $1.9300
  • 100 $1.7500
  • 250 $1.7000
  • 500 $1.5500
  • 1,000 $1.4200
  • 2,000 $1.4100
  • 5,000 $1.3900
$1.3900 / $2.7700 Buy Now
STMicroelectronics N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in TO-220 package RoHS: Compliant Min Qty: 1 1814
  • 1 $2.7200
  • 10 $2.4400
  • 25 $1.8900
  • 100 $1.7200
  • 250 $1.6700
  • 500 $1.5200
$1.5200 / $2.7200 Buy Now
Future Electronics N-Channel 650 V 0.55 Ohm Flange Mount MDmesh II Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube 8000
Tube
  • 50 $1.5300
  • 200 $1.4900
  • 500 $1.4600
  • 1,250 $1.4300
  • 2,000 $1.3900
$1.3900 / $1.5300 Buy Now
Future Electronics N-Channel 650 V 0.55 Ohm Flange Mount MDmesh II Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube 90
Tube
  • 50 $1.5300
  • 200 $1.4900
  • 500 $1.4600
  • 1,250 $1.4300
  • 2,000 $1.3900
$1.3900 / $1.5300 Buy Now
Future Electronics N-Channel 650 V 0.55 Ohm Flange Mount MDmesh II Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.5300
  • 200 $1.4900
  • 500 $1.4600
  • 1,250 $1.4300
  • 2,000 $1.3900
$1.3900 / $1.5300 Buy Now
Future Electronics N-Channel 650 V 0.55 Ohm Flange Mount MDmesh II Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.3500
  • 200 $1.3100
  • 1,000 $1.2700
  • 2,000 $1.2600
  • 6,250 $1.2100
$1.2100 / $1.3500 Buy Now
DISTI # STP10NM60N
TME Transistor: N-MOSFET, MDmesh™ ||, unipolar, 600V, 5A, Idm: 32A, 70W Min Qty: 1 0
  • 1 $1.1200
  • 5 $1.0100
  • 25 $0.8900
  • 100 $0.8000
  • 500 $0.7400
$0.7400 / $1.1200 RFQ
DISTI # STP10NM60N
Avnet Silica Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Tube (Alt: STP10NM60N) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 2 Weeks, 3 Days Silica - 0
Buy Now
Chip1Cloud MOSFET N-CH 600V 8A TO-220 / Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube 62700
RFQ
DISTI # STP10NM60N
EBV Elektronik Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 Tube (Alt: STP10NM60N) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 2 Weeks, 3 Days EBV - 0
Buy Now
DISTI # 2098287
Farnell MOSFET, N CH, 600V, 8A, TO220 RoHS: Compliant Min Qty: 1 Lead time: 52 Weeks, 4 Days Container: Each 0
  • 1 $3.1389
  • 10 $2.3604
  • 100 $1.8959
  • 250 $1.7703
  • 500 $1.6573
  • 1,000 $1.2681
  • 5,000 $1.2317
$1.2317 / $3.1389 Buy Now
Sense Electronic Company Limited TO-220 5745
RFQ

Part Details for STP10NM60N

STP10NM60N CAD Models

STP10NM60N Part Data Attributes:

STP10NM60N STMicroelectronics
Buy Now Datasheet
Compare Parts:
STP10NM60N STMicroelectronics N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in TO-220 package
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer STMicroelectronics
Additional Feature AVALANCHE ENERGY RATED
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.55 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1.2 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 70 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 47 ns
Turn-on Time-Max (ton) 22 ns

Alternate Parts for STP10NM60N

This table gives cross-reference parts and alternative options found for STP10NM60N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP10NM60N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFSL4127PBF Power Field-Effect Transistor, 72A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN Infineon Technologies AG STP10NM60N vs IRFSL4127PBF
STP6N95K5 N-channel 950 V, 1 Ohm typ., 9 A MDmesh K5 Power MOSFET in TO-220 package STMicroelectronics STP10NM60N vs STP6N95K5
STP90N55F4 N-channel 55 V, 0.0064 Ohm, 90 A TO-220 Power MOSFET STMicroelectronics STP10NM60N vs STP90N55F4
STP120N4F6 N-channel 40 V, 3.8 mOhm, 80 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET STMicroelectronics STP10NM60N vs STP120N4F6
STP19NM50N N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220 STMicroelectronics STP10NM60N vs STP19NM50N
STP5N52K3 4.4A, 525V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN STMicroelectronics STP10NM60N vs STP5N52K3
STP20N95K5 N-channel 950 V, 0.275 Ohm typ., 17.5 A MDmesh K5 Power MOSFET in a TO-220 package STMicroelectronics STP10NM60N vs STP20N95K5
STP11NM50N 9A, 500V, 0.47ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN STMicroelectronics STP10NM60N vs STP11NM50N
STP95N3LLH6 N-channel 30 V, 4.2 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package STMicroelectronics STP10NM60N vs STP95N3LLH6
STP13NM60N N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in a TO-220 package STMicroelectronics STP10NM60N vs STP13NM60N

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