| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPI05CN10NG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 100A I(D), 100V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | STP120NF10 vs IPI05CN10NG |
| APT10M09B2VR | Microsemi Corporation (now Microchip) | Check for Price | Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP120NF10 vs APT10M09B2VR |
| APT10M09B2VR | Advanced Power Technology | Check for Price | Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP120NF10 vs APT10M09B2VR |
Part Details for STP120NF10 by STMicroelectronics
Results Overview of STP120NF10 by STMicroelectronics
- Distributor Offerings: (23 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (3 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP120NF10 Information
STP120NF10 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP120NF10
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
33R1250
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Newark | Mosfet, N, |Stmicroelectronics STP120NF10 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 585 |
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$1.2700 / $3.5100 | Buy Now |
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DISTI #
26AM4893
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Newark | Lv Mosfet Planar & Old, |Stmicroelectronics STP120NF10 RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$1.5100 | Buy Now |
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DISTI #
497-4118-5-ND
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DigiKey | MOSFET N-CH 100V 110A TO220AB Min Qty: 1 Container: Tube |
17658 Tube |
|
$2.5645 / $6.4200 | Buy Now |
|
DISTI #
E02:0323_00039311
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Arrow Electronics | Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-220AB Tube RoHS: Exempt Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2533 | Europe - 8686 |
|
$1.0725 / $1.2401 | Buy Now |
|
DISTI #
V36:1790_06564845
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Arrow Electronics | Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-220AB Tube COO: China RoHS: Exempt Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks Date Code: 2451 | Americas - 2000 |
|
$1.1572 | Buy Now |
|
DISTI #
511-STP120NF10
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Mouser Electronics | MOSFETs N-Ch 100 Volt 120A STripFET II 110A RoHS: Compliant | 12 |
|
$1.2900 / $3.5800 | Buy Now |
|
DISTI #
91583338
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Verical | Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-220AB Tube RoHS: Exempt Min Qty: 5 Package Multiple: 1 Date Code: 2533 | Americas - 8685 |
|
$1.0687 / $1.2357 | Buy Now |
|
DISTI #
89512877
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Verical | Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-220AB Tube RoHS: Exempt Min Qty: 1000 Package Multiple: 1000 Date Code: 2451 | Americas - 2000 |
|
$1.1572 | Buy Now |
|
|
STMicroelectronics | N-channel 100 V, 9 mOhm typ., 110 A STripFET II Power MOSFET in TO-220 package COO: Singapore Min Qty: 1 | 0 |
|
$1.5800 / $3.5800 | Buy Now |
|
|
Future Electronics | N-Channel 100 V 10.5 mO STripFET™ II MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Lead time: 15 Weeks Container: Tube | 0Tube |
|
$1.1900 / $1.2700 | Buy Now |
STP120NF10 CAD Models
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STP120NF10 Part Data Attributes
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STP120NF10
STMicroelectronics
Buy Now
Datasheet
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STP120NF10
STMicroelectronics
Power Field-Effect Transistor, 110A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-220AB | |
| Package Description | To-220, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 550 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 110 A | |
| Drain-source On Resistance-Max | 0.0105 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 312 W | |
| Pulsed Drain Current-Max (IDM) | 440 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STP120NF10
This table gives cross-reference parts and alternative options found for STP120NF10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP120NF10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STP120NF10 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STP120NF10 is -40°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, minimizing thermal resistance, and avoiding thermal hotspots.
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To minimize EMI, it's recommended to use a multi-layer PCB with a solid ground plane, keep the device away from noise sources, and use shielding or filtering components as needed.
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Yes, the STP120NF10 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, to ensure reliable operation.
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To protect the device, use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, such as zener diodes or transient voltage suppressors, and ensure that the device is operated within its recommended voltage and current ratings.