| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STP4NK60Z | STMicroelectronics | $1.0595 | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP16NK60Z vs STP4NK60Z |
| STP40NE03L-20 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 40A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP16NK60Z vs STP40NE03L-20 |
| PHB44N06LT | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 44A I(D), 55V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP16NK60Z vs PHB44N06LT |
| 2SK3521-01L | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP16NK60Z vs 2SK3521-01L |
| NDP610BL | Texas Instruments | Check for Price | 24A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STP16NK60Z vs NDP610BL |
| NDB706AEL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STP16NK60Z vs NDB706AEL |
| IPD90N06S306ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | STP16NK60Z vs IPD90N06S306ATMA1 |
| FQA30N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP16NK60Z vs FQA30N40 |
| SSP10N60B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP16NK60Z vs SSP10N60B |
| IPI80N06S4L07AKSA2 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 60V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | STP16NK60Z vs IPI80N06S4L07AKSA2 |
Part Details for STP16NK60Z by STMicroelectronics
Results Overview of STP16NK60Z by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
STP16NK60Z Information
STP16NK60Z by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP16NK60Z
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Power Field-Effect Transistor, 14A I(D), 620V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4144 |
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RFQ |
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STP16NK60Z Part Data Attributes
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STP16NK60Z
STMicroelectronics
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Datasheet
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STP16NK60Z
STMicroelectronics
Power Field-Effect Transistor, 14A I(D), 620V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | Rohs Compliant, To-220, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 360 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 620 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.42 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 190 W | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STP16NK60Z
This table gives cross-reference parts and alternative options found for STP16NK60Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP16NK60Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STP16NK60Z Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STP16NK60Z is -40°C to 150°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 10V, and the drain-source voltage (Vds) should be between 10V and 600V.
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The maximum current rating for the STP16NK60Z is 16A.
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To protect the STP16NK60Z from overvoltage and overcurrent, use a voltage regulator and a current limiter in the circuit design.
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The typical turn-on time is 10ns and the typical turn-off time is 20ns.