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Part Details for STP20NF06 by STMicroelectronics
Results Overview of STP20NF06 by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP20NF06 Information
STP20NF06 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP20NF06
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-4374-5-ND
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DigiKey | MOSFET N-CH 60V 20A TO220AB Min Qty: 2000 Container: Tube |
0 Tube |
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$0.4951 | Buy Now |
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Future Electronics | N-Channel 60 V 70 mOhm Flange Mount STripFET™ II Power MOSFET - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 40 Package Multiple: 1 Container: Tube | 500Tube |
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$0.5200 / $0.5850 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 60V, 0.07OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 100 |
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$0.4984 / $1.0680 | Buy Now |
Part Details for STP20NF06
STP20NF06 CAD Models
STP20NF06 Part Data Attributes
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STP20NF06
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP20NF06
STMicroelectronics
Power Field-Effect Transistor, 20A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | Rohs Compliant Package-3 | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 120 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 60 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STP20NF06
This table gives cross-reference parts and alternative options found for STP20NF06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP20NF06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| NDB706AL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STP20NF06 vs NDB706AL |
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STP20NF06 vs IPB80N06S2LH5ATMA1 |
| NDB706AEL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STP20NF06 vs NDB706AEL |
| STP40NE03L-20 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 40A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP20NF06 vs STP40NE03L-20 |
| STP5NB80 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP20NF06 vs STP5NB80 |
| STP22NF03L | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 22A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP20NF06 vs STP22NF03L |
| PHB44N06LT | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 44A I(D), 55V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP20NF06 vs PHB44N06LT |
| FQA17N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP20NF06 vs FQA17N40 |
| BUK465-60A | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 41A I(D), 60V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP20NF06 vs BUK465-60A |
| FDP6035L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP20NF06 vs FDP6035L |
STP20NF06 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) of the STP20NF06 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure safe operation.
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To calculate the junction temperature of the STP20NF06, you can use the following formula: Tj = Ta + (Rth(j-a) x Pd), where Tj is the junction temperature, Ta is the ambient temperature, Rth(j-a) is the thermal resistance from junction to ambient, and Pd is the power dissipation. The thermal resistance values can be found in the datasheet.
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To minimize thermal resistance, it's recommended to use a PCB layout that provides a good thermal path from the device to the heat sink or ambient air. This can be achieved by using a large copper area under the device, multiple vias to connect the top and bottom layers, and a thermal pad on the bottom layer. The datasheet provides some general guidelines for PCB layout, but it's recommended to consult with a thermal expert or use thermal simulation tools for optimal design.
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The STP20NF06 is a power MOSFET designed for low-frequency switching applications. While it can be used in high-frequency switching applications, its performance may not be optimal due to its relatively high gate charge and internal capacitances. It's recommended to consult with an application engineer or use simulation tools to evaluate the device's performance in high-frequency switching applications.
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To select the right gate driver for the STP20NF06, you need to consider the device's gate charge, voltage rating, and switching frequency. The gate driver should be able to provide sufficient current to charge and discharge the gate capacitance quickly, while also ensuring that the voltage rating is not exceeded. The datasheet provides some guidelines for gate driver selection, but it's recommended to consult with an application engineer or use simulation tools for optimal design.