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Part Details for STP26N65DM2 by STMicroelectronics
Results Overview of STP26N65DM2 by STMicroelectronics
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP26N65DM2 Information
STP26N65DM2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP26N65DM2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
497-STP26N65DM2-ND
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DigiKey | MOSFET N-CH 650V 20A TO220 Min Qty: 1 Container: Tube |
856 Tube |
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$1.4329 / $4.4600 | Buy Now |
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DISTI #
STP26N65DM2
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Avnet Americas | MOSFET 650V 0.190 OHM FAST DIODE - Bulk (Alt: STP26N65DM2) COO: Singapore RoHS: Compliant Min Qty: 1000 Package Multiple: 50 Lead time: 18 Weeks, 0 Days Container: Bulk | 0 |
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$1.3536 / $1.5445 | Buy Now |
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DISTI #
511-STP26N65DM2
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Mouser Electronics | MOSFETs N-channel 650 V, 0.156 Ohm typ., 20 A MDmesh DM2 Power MOSFET in a TO-220 packag RoHS: Compliant | 0 |
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$1.5500 / $4.4300 | Order Now |
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DISTI #
511-STP26N65DM2
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Mouser Electronics | MOSFETs N-channel 650 V, 0.156 Ohm typ., 20 A MDmesh DM2 Power MOSFET in a TO-220 packag RoHS: Compliant | 0 |
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$1.4100 / $4.4300 | Order Now |
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STMicroelectronics | N-channel 650 V, 156 mOhm typ., 20 A MDmesh DM2 Power MOSFET in a TO-220 package COO: Singapore RoHS: Compliant Min Qty: 1 | 0 |
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$1.7000 / $4.4300 | Buy Now |
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DISTI #
STP26N65DM2
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TME | Transistor: N-MOSFET, MDmesh™ DM2, unipolar, 650V, 12.6A, Idm: 53A Min Qty: 1 | 0 |
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$1.9000 / $3.2000 | RFQ |
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DISTI #
STP26N65DM2
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Avnet Silica | MOSFET 650V 0190 OHM FAST DIODE (Alt: STP26N65DM2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 19 Weeks, 0 Days | Silica - 0 |
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RFQ | |
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DISTI #
STP26N65DM2
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EBV Elektronik | MOSFET 650V 0190 OHM FAST DIODE (Alt: STP26N65DM2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 19 Weeks, 0 Days | EBV - 0 |
|
RFQ | |
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Vyrian | Power Field-Effect Transistor | 8572 |
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RFQ |
Part Details for STP26N65DM2
STP26N65DM2 CAD Models
STP26N65DM2 Part Data Attributes
STP26N65DM2 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the STP26N65DM2 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings. It's recommended to consult with STMicroelectronics' application notes and technical support for more information.
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To ensure proper thermal management of the STP26N65DM2, it's essential to provide a suitable heat sink, ensure good thermal interface material (TIM) between the device and heat sink, and maintain a low thermal resistance. The device's thermal resistance (RthJA) is specified in the datasheet, and the user should design the thermal management system to keep the junction temperature (Tj) below the maximum rated value. Consult the datasheet and application notes for more information on thermal management.
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The recommended PCB layout and design considerations for the STP26N65DM2 include using a multi-layer PCB with a solid ground plane, placing the device close to the heat sink, and using wide copper traces for power and ground connections. It's also essential to minimize the loop area of the power circuit to reduce electromagnetic interference (EMI). Consult the datasheet and application notes for more information on PCB layout and design considerations.
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To protect the STP26N65DM2 from electrostatic discharge (ESD), it's essential to follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. During PCB assembly, ensure that the device is handled and placed correctly, and that the PCB is properly grounded. Additionally, consider adding ESD protection devices, such as TVS diodes, to the circuit design.
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The reliability and lifetime expectations for the STP26N65DM2 are dependent on various factors, including the operating conditions, thermal management, and quality of the device. STMicroelectronics provides reliability data and lifetime estimates in the datasheet and application notes. It's essential to consult these resources and consider the specific application requirements to ensure the device meets the expected reliability and lifetime targets.