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Power Field-Effect Transistor, 38A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP45NF06 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
26M3698
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Newark | Mosfet Transistor, N Channel, 26 A, 60 V, 28 Mohm, 10 V, 3 V Rohs Compliant: Yes |Stmicroelectronics STP45NF06 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 203 |
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$0.4820 / $1.7700 | Buy Now |
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DISTI #
497-3189-5-ND
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DigiKey | MOSFET N-CH 60V 38A TO220AB Min Qty: 1 Container: Tube |
1564 Tube |
|
$0.6574 / $2.5200 | Buy Now |
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DISTI #
STP45NF06
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Avnet Americas | - Rail/Tube (Alt: STP45NF06) COO: Singapore RoHS: Compliant Min Qty: 3000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
|
$0.2816 / $0.2874 | Buy Now |
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DISTI #
511-STP45NF06
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Mouser Electronics | MOSFETs N-Ch 60 Volt 38 Amp RoHS: Compliant | 935 |
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$0.7560 / $2.5400 | Buy Now |
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DISTI #
V36:1790_06564748
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Arrow Electronics | Trans MOSFET N-CH 60V 38A 3-Pin(3+Tab) TO-220AB Tube COO: China RoHS: Exempt Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks Date Code: 2443 | Americas - 10000 |
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$0.2398 / $0.2527 | Buy Now |
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DISTI #
E02:0323_00212523
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Arrow Electronics | Trans MOSFET N-CH 60V 38A 3-Pin(3+Tab) TO-220AB Tube RoHS: Exempt Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2546 | Europe - 4135 |
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$0.3024 / $0.6717 | Buy Now |
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STMicroelectronics | N-Channel 60V - 0.022 Ohm - 38A TO-220 STripFET(TM) II POWER MOSFET COO: Singapore RoHS: Compliant Min Qty: 1 | 935 |
|
$0.8800 / $2.5400 | Buy Now |
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|
Future Electronics | N-Channel 60 V 28 mΩ 43 nC Falnge Mount StripFET II Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 1 Lead time: 12 Weeks Container: Tube | 13116Tube |
|
$0.3250 / $0.3650 | Buy Now |
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Future Electronics | N-Channel 60 V 28 mΩ 43 nC Falnge Mount StripFET II Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 50 Lead time: 12 Weeks Container: Tube | 0Tube |
|
$0.3250 / $0.3650 | Buy Now |
|
DISTI #
86942288
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Verical | Trans MOSFET N-CH 60V 38A 3-Pin(3+Tab) TO-220AB Tube RoHS: Exempt Min Qty: 1000 Package Multiple: 1000 Date Code: 2443 | Americas - 10000 |
|
$0.2398 / $0.2527 | Buy Now |
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STP45NF06
STMicroelectronics
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Datasheet
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STP45NF06
STMicroelectronics
Power Field-Effect Transistor, 38A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-220AB | |
| Package Description | Rohs Compliant, To-220, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Avalanche Energy Rating (Eas) | 260 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 38 A | |
| Drain-source On Resistance-Max | 0.028 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 63 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 80 W | |
| Pulsed Drain Current-Max (IDM) | 152 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for STP45NF06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP45NF06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STP45NF06 vs IPB80N06S2LH5ATMA1 |
| NDB706AL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STP45NF06 vs NDB706AL |
| FQPF7N20 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP45NF06 vs FQPF7N20 |
| FDH45N50F | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 45A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | STP45NF06 vs FDH45N50F |
| STW80NF55-06 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | STP45NF06 vs STW80NF55-06 |
| STP19N06 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 19A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP45NF06 vs STP19N06 |
| STP13NK50Z | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 11A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP45NF06 vs STP13NK50Z |
| IXFH7N90Q | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | STP45NF06 vs IXFH7N90Q |
| IXFH14N80 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | STP45NF06 vs IXFH14N80 |
| SPB80N06S2-07 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STP45NF06 vs SPB80N06S2-07 |
The maximum operating temperature range for the STP45NF06 is -55°C to 150°C.
To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 10V and 60V.
The maximum current rating for the STP45NF06 is 45A.
To protect the STP45NF06 from overvoltage and overcurrent, use a voltage regulator and a current limiter in the circuit design.
The typical turn-on time for the STP45NF06 is 10ns, and the typical turn-off time is 20ns.