| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFH12N100F | IXYS Corporation | $7.5429 | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | STP50NE08 vs IXFH12N100F |
| NDP506B | National Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 24A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP50NE08 vs NDP506B |
| IRFP244B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 16A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP50NE08 vs IRFP244B |
| STP3NB80 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 2.6A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP50NE08 vs STP3NB80 |
| NDB706AL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STP50NE08 vs NDB706AL |
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STP50NE08 vs IPB80N06S2LH5ATMA1 |
| NDP606BE | Texas Instruments | Check for Price | 42A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STP50NE08 vs NDP606BE |
| FQA17N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP50NE08 vs FQA17N40 |
| FDP6035L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP50NE08 vs FDP6035L |
| BUK465-60A | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 41A I(D), 60V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP50NE08 vs BUK465-60A |
Part Details for STP50NE08 by STMicroelectronics
Results Overview of STP50NE08 by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP50NE08 Information
STP50NE08 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP50NE08
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
497-2787-5-ND
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DigiKey | MOSFET N-CH 80V 50A TO220AB Min Qty: 1000 Container: Tube |
0 Tube |
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$1.0133 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 80V, 0.024OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 131 |
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$7.9200 / $14.4000 | Buy Now |
|
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Vyrian | Power Field-Effect Transistor, 50A I(D), 80V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10178 |
|
RFQ |
STP50NE08 Part Data Attributes
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STP50NE08
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP50NE08
STMicroelectronics
Power Field-Effect Transistor, 50A I(D), 80V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | To-220, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 300 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.024 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 140 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-on Time-Max (ton) | 180 Ns |
Alternate Parts for STP50NE08
This table gives cross-reference parts and alternative options found for STP50NE08. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP50NE08, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STP50NE08 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the STP50NE08 is -40°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, minimizing thermal resistance, and avoiding thermal hotspots.
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The recommended gate drive voltage for the STP50NE08 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the STP50NE08 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a conductive container or bag.
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The maximum allowed current for the STP50NE08 is 50A, with a maximum pulsed current of 100A.