| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXTQ26N50P | IXYS Corporation | $3.3722 | Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP55NF06 vs IXTQ26N50P |
| IRFS620 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP55NF06 vs IRFS620 |
| NDP706A | National Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 75A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP55NF06 vs NDP706A |
| STP19N06 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 19A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP55NF06 vs STP19N06 |
| FDH45N50F | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 45A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | STP55NF06 vs FDH45N50F |
| STW80NF55-06 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | STP55NF06 vs STW80NF55-06 |
| STP3LN62K3 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 620V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP55NF06 vs STP3LN62K3 |
| IXTK74N20 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 74A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | STP55NF06 vs IXTK74N20 |
| PHB23NQ15T/T3 | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 23A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP55NF06 vs PHB23NQ15T/T3 |
| FDD6644 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 67A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | STP55NF06 vs FDD6644 |
Part Details for STP55NF06 by STMicroelectronics
Results Overview of STP55NF06 by STMicroelectronics
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP55NF06 Information
STP55NF06 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP55NF06
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
72K7240
|
Newark | Mosfet, N, To-220, |Stmicroelectronics STP55NF06 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$0.7490 / $2.4900 | Buy Now |
|
DISTI #
497-2777-5-ND
|
DigiKey | MOSFET N-CH 60V 50A TO220AB Min Qty: 1 Container: Tube |
12540 Tube |
|
$1.1541 / $3.1900 | Buy Now |
|
DISTI #
E02:0323_00210264
|
Arrow Electronics | Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220AB Tube RoHS: Exempt Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2532 | Europe - 7493 |
|
$1.1748 / $3.2473 | Buy Now |
|
DISTI #
511-STP55NF06
|
Mouser Electronics | MOSFETs N-Ch 60 Volt 55 Amp RoHS: Compliant | 3365 |
|
$0.7860 / $2.8400 | Buy Now |
|
DISTI #
91583385
|
Verical | Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220AB Tube RoHS: Exempt Min Qty: 11 Package Multiple: 1 Date Code: 2532 | Americas - 7491 |
|
$1.1748 / $2.1031 | Buy Now |
|
|
STMicroelectronics | N-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in TO-220 package COO: Singapore Min Qty: 1 | 3452 |
|
$1.0400 / $2.8400 | Buy Now |
|
|
Future Electronics | N-Channel 60 V 18 mOhm STripFET™ II Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 50 Lead time: 15 Weeks Container: Tube | 0Tube |
|
$0.3450 / $0.3900 | Buy Now |
|
|
Future Electronics | N-Channel 60 V 18 mOhm STripFET™ II Power MosFet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 50 Lead time: 15 Weeks Container: Tube | 0Tube |
|
$0.3450 / $0.3900 | Buy Now |
|
DISTI #
STP55NF06
|
Avnet Americas | Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP55NF06) COO: Singapore RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
|
$0.4114 / $0.5866 | Buy Now |
|
|
Quest Components | 50 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 25 |
|
$0.4860 / $0.8100 | Buy Now |
STP55NF06 CAD Models
-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
STP55NF06 Part Data Attributes
|
|
STP55NF06
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STP55NF06
STMicroelectronics
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-220AB | |
| Package Description | To-220, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Avalanche Energy Rating (Eas) | 340 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.018 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 100 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STP55NF06
This table gives cross-reference parts and alternative options found for STP55NF06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP55NF06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STP55NF06 Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the STP55NF06 is -40°C to 150°C.
-
To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to ground through a resistor. The recommended biasing voltage is typically between 4V to 10V.
-
The maximum current rating for the STP55NF06 is 55A.
-
Use a voltage regulator to limit the voltage supply to the recommended maximum voltage, and add a current limiter or fuse to prevent overcurrent conditions.
-
Yes, the STP55NF06 is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.