Part Details for STP7NK30Z by STMicroelectronics
Results Overview of STP7NK30Z by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (6 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
STP7NK30Z Information
STP7NK30Z by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP7NK30Z
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
STP7NK30Z-ND
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DigiKey | MOSFET N-CH 300V 5A TO220AB Min Qty: 2000 Container: Tube |
0 Tube |
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$0.6041 | Buy Now |
Part Details for STP7NK30Z
STP7NK30Z CAD Models
STP7NK30Z Part Data Attributes
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STP7NK30Z
STMicroelectronics
Buy Now
Datasheet
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STP7NK30Z
STMicroelectronics
Power Field-Effect Transistor, 5A I(D), 300V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | Rohs Compliant, To-220, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 130 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 300 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 0.9 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STP7NK30Z
This table gives cross-reference parts and alternative options found for STP7NK30Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP7NK30Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 2SK1400 | Hitachi Ltd | Check for Price | Power Field-Effect Transistor, 7A I(D), 0.7ohm, 1-Element, N-Channel, Metal-oxide Semiconductor FET, TO-220AB | STP7NK30Z vs 2SK1400 |
| FQP5N30 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5.4A I(D), 300V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP7NK30Z vs FQP5N30 |
| FQP5N30 | Rochester Electronics LLC | Check for Price | 5.4A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STP7NK30Z vs FQP5N30 |
| FQP7N30 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7A I(D), 300V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP7NK30Z vs FQP7N30 |
| FS10UM-6 | Powerex Power Semiconductors | Check for Price | Power Field-Effect Transistor, 10A I(D), 300V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP7NK30Z vs FS10UM-6 |
| 2SK1400 | Renesas Electronics Corporation | Check for Price | Power Field-Effect Transistor, 7A I(D), 300V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP7NK30Z vs 2SK1400 |
STP7NK30Z Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) of the STP7NK30Z is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure safe operation.
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To calculate the junction temperature of the STP7NK30Z, you can use the following formula: Tj = Ta + (Pd x Rthja), where Tj is the junction temperature, Ta is the ambient temperature, Pd is the power dissipation, and Rthja is the thermal resistance from junction to ambient. The thermal resistance values can be found in the datasheet.
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To minimize thermal resistance, it's recommended to use a PCB layout that maximizes the copper area and minimizes the thermal resistance between the device and the heat sink. A good practice is to use a large copper pad under the device, and to connect it to a heat sink or a thermal via. The datasheet provides some general guidelines for PCB layout, but it's recommended to consult with a thermal expert or use thermal simulation tools for optimal design.
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The STP7NK30Z is a power MOSFET designed for high-voltage and high-current applications, but it may not be suitable for high-frequency switching applications due to its relatively high gate charge and output capacitance. The datasheet provides some information on the device's switching characteristics, but it's recommended to consult with an application engineer or use simulation tools to determine the device's suitability for high-frequency switching applications.
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To ensure the reliability of the STP7NK30Z in a high-reliability application, it's recommended to follow the device's recommended operating conditions, use a robust PCB design, and implement adequate thermal management. Additionally, it's recommended to perform thorough testing and validation of the device in the specific application, and to consult with a reliability expert or use reliability simulation tools to identify potential failure modes and mitigate risks.