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Power Field-Effect Transistor, 5.4A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP7NK40Z by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
26M3707
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Newark | N Channel Mosfet, 400V, 5.4A To-220, Channel Type:N Channel, Drain Source Voltage Vds:400V, Continuous Drain Current Id:5.4A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.75V, Msl:- Rohs Compliant: Yes RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 9263 |
|
$0.6890 / $2.0400 | Buy Now |
|
DISTI #
497-3200-5-ND
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DigiKey | MOSFET N-CH 400V 5.4A TO220AB Min Qty: 1 Container: Tube |
3316 Tube |
|
$0.6970 / $2.6300 | Buy Now |
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DISTI #
STP7NK40Z
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Avnet Americas | - Rail/Tube (Alt: STP7NK40Z) COO: Singapore RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$0.5582 / $0.5935 | Buy Now |
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DISTI #
511-STP7NK40Z
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Mouser Electronics | MOSFETs N-Ch 400 Volt 5.4 A Zener SuperMESH RoHS: Compliant | 2286 |
|
$0.8080 / $2.4500 | Buy Now |
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DISTI #
E02:0323_00211809
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Arrow Electronics | Trans MOSFET N-CH 400V 5.4A 3-Pin(3+Tab) TO-220AB Tube RoHS: Exempt Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2450 | Europe - 4440 |
|
$0.5110 / $0.6106 | Buy Now |
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DISTI #
V36:1790_06564879
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Arrow Electronics | Trans MOSFET N-CH 400V 5.4A 3-Pin(3+Tab) TO-220AB Tube COO: China RoHS: Exempt Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks Date Code: 2446 | Americas - 2000 |
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$0.6956 / $0.8507 | Buy Now |
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STMicroelectronics | N-channel 400 V, 0.85 Ohm typ., 5.4 A SuperMESH POWER Mosfet in TO-220 package COO: Singapore RoHS: Compliant Min Qty: 1 | 0 |
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$0.7200 / $2.0800 | Buy Now |
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Future Electronics | N-Channel 400 V 1 Ω SuperMESH™Power MOSFET - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 16 Weeks Container: Tube | 200Tube |
|
$0.5300 / $0.5900 | Buy Now |
|
|
Future Electronics | N-Channel 400 V 1 Ω SuperMESH™Power MOSFET - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 50 Lead time: 20 Weeks Container: Tube | 0Tube |
|
$0.5300 / $0.5900 | Buy Now |
|
|
Future Electronics | N-Channel 400 V 1 Ω SuperMESH™Power MOSFET - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 50 Lead time: 16 Weeks Container: Tube | 0Tube |
|
$0.5300 / $0.5900 | Buy Now |
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STP7NK40Z
STMicroelectronics
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Datasheet
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Compare Parts:
STP7NK40Z
STMicroelectronics
Power Field-Effect Transistor, 5.4A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-220AB | |
| Package Description | To-220, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 130 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 5.4 A | |
| Drain-source On Resistance-Max | 1 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 18 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 70 W | |
| Pulsed Drain Current-Max (IDM) | 21.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for STP7NK40Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP7NK40Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NDB706AL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STP7NK40Z vs NDB706AL |
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STP7NK40Z vs IPB80N06S2LH5ATMA1 |
| NDB706AEL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STP7NK40Z vs NDB706AEL |
| STP40NE03L-20 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 40A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP7NK40Z vs STP40NE03L-20 |
| STP5NB80 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP7NK40Z vs STP5NB80 |
| STP22NF03L | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 22A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP7NK40Z vs STP22NF03L |
| PHB44N06LT | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 44A I(D), 55V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP7NK40Z vs PHB44N06LT |
| FQA17N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP7NK40Z vs FQA17N40 |
| BUK465-60A | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 41A I(D), 60V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP7NK40Z vs BUK465-60A |
| FDP6035L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP7NK40Z vs FDP6035L |
The maximum operating temperature range for the STP7NK40Z is -40°C to 150°C.
To ensure reliability, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow management.
The maximum voltage that can be applied to the drain-source of the STP7NK40Z is 400V.
To protect the STP7NK40Z from ESD, follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD-protection circuits in the design.
The recommended gate drive voltage for the STP7NK40Z is between 10V and 15V, with a maximum gate-source voltage of ±20V.