Part Details for STP80N70F4 by STMicroelectronics
Results Overview of STP80N70F4 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
STP80N70F4 Information
STP80N70F4 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP80N70F4
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Power Field-Effect Transistor, 85A I(D), 68V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 7344 |
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RFQ |
Part Details for STP80N70F4
STP80N70F4 CAD Models
STP80N70F4 Part Data Attributes
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STP80N70F4
STMicroelectronics
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Datasheet
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STP80N70F4
STMicroelectronics
Power Field-Effect Transistor, 85A I(D), 68V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | Rohs Compliant, To-220, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 185 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 68 V | |
| Drain Current-Max (ID) | 85 A | |
| Drain-source On Resistance-Max | 0.0098 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 340 A | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
STP80N70F4 Frequently Asked Questions (FAQ)
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The maximum operating temperature of the STP80N70F4 is 150°C, as specified in the datasheet.
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To ensure the STP80N70F4 is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
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The maximum current rating of the STP80N70F4 is 80A, as specified in the datasheet. However, this rating is dependent on the device's thermal performance and cooling conditions.
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To protect the STP80N70F4 from overvoltage and overcurrent, use a suitable voltage regulator and current limiter in your circuit design. Additionally, consider using a gate driver with built-in overcurrent protection.
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The recommended gate resistor value for the STP80N70F4 depends on the specific application and switching frequency. A typical value is around 10-20 ohms, but this may need to be adjusted based on the device's gate capacitance and the driver's output impedance.