-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 80A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
STP80NF06 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
497-3201-5-ND
|
DigiKey | MOSFET N-CH 60V 80A TO220AB Min Qty: 1000 Container: Tube |
0 Tube |
|
$1.8423 | Buy Now |
|
|
STMicroelectronics | N-CHANNEL 60V 0.0065 Ohm 80A TO-220 STripFET™, II POWER MOSFET COO: China RoHS: Compliant Min Qty: 1 | 0 |
|
$2.1700 / $3.4400 | Buy Now |
|
|
Future Electronics | N-Channel 60 V 0.008 Ohm Flange Mount STripFET II™ Power MOSFET - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
|
$1.2000 / $1.2800 | Buy Now |
|
|
Bristol Electronics | Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220AB Tube | 650 |
|
RFQ | |
|
|
Quest Components | 80 A, 60 V, 0.008 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB | 5965 |
|
$0.9450 / $2.2500 | Buy Now |
|
|
Quest Components | 80 A, 60 V, 0.008 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB | 520 |
|
$1.4850 / $3.6000 | Buy Now |
|
|
Quest Components | 80 A, 60 V, 0.008 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB | 16 |
|
$3.7180 / $5.0700 | Buy Now |
|
|
ComSIT USA | Power Field-Effect Transistor, 80A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ECCN: EAR99 RoHS: Not Compliant |
|
|
RFQ | |
|
|
Vyrian | Power Field-Effect Transistor, 80A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5040 |
|
RFQ |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
|
STP80NF06
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STP80NF06
STMicroelectronics
Power Field-Effect Transistor, 80A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | Rohs Compliant Package-3 | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Additional Feature | Low Threshold | |
| Avalanche Energy Rating (Eas) | 870 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.008 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
This table gives cross-reference parts and alternative options found for STP80NF06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP80NF06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NDP610BL | Texas Instruments | Check for Price | 24A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STP80NF06 vs NDP610BL |
| STP40NE03L-20 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 40A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP80NF06 vs STP40NE03L-20 |
| STP5NB80 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP80NF06 vs STP5NB80 |
| PHB44N06LT | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 44A I(D), 55V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP80NF06 vs PHB44N06LT |
| 2SK3521-01L | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP80NF06 vs 2SK3521-01L |
| FDP6035L | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP80NF06 vs FDP6035L |
| FQA17N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP80NF06 vs FQA17N40 |
| STD65N6F3 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 65A I(D), 60V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP80NF06 vs STD65N6F3 |
| BUK465-60A | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 41A I(D), 60V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP80NF06 vs BUK465-60A |
| SSP10N60B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP80NF06 vs SSP10N60B |
The maximum operating temperature range for the STP80NF06 is -40°C to 150°C.
Yes, the STP80NF06 is qualified for automotive and industrial applications, making it suitable for high-reliability use cases.
To ensure proper biasing, connect the gate to a voltage source through a resistor, and ensure the drain-source voltage is within the recommended range (typically 10-20V).
The maximum current rating for the STP80NF06 is 80A, with a pulsed current capability of up to 160A.
Yes, the STP80NF06 is suitable for switching applications due to its low RDS(on) and high switching speed.