Part Details for STP9N60M2 by STMicroelectronics
Results Overview of STP9N60M2 by STMicroelectronics
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STP9N60M2 Information
STP9N60M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP9N60M2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
45AC7736
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Newark | Mosfet, N-Ch, 600V, 5.5A, To-220Ab, |Stmicroelectronics STP9N60M2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.8330 / $2.1900 | Buy Now |
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DISTI #
497-13843-5-ND
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DigiKey | MOSFET N-CH 600V 5.5A TO220 Min Qty: 1 Container: Tube |
0 Tube |
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$0.6826 / $2.0100 | Buy Now |
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DISTI #
93969427
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Verical | Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) TO-220AB Tube RoHS: Exempt Min Qty: 13 Package Multiple: 1 Date Code: 2450 | Americas - 962 |
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$0.4964 / $1.1801 | Buy Now |
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Future Electronics | N-Channel 600 V 5.5 A 780 mOhm Through Hole MDmesh™ M2 Power Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Lead time: 24 Weeks Container: Tube | 0Tube |
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$0.8550 / $0.8950 | Buy Now |
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DISTI #
STP9N60M2
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TME | Transistor: N-MOSFET, unipolar, 600V, 5.5A, 60W, TO220-3 Min Qty: 1 | 103 |
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$0.6010 / $1.0600 | Buy Now |
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Vyrian | Power Field-Effect Transistor, 5.5A I(D), 600V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10722 |
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RFQ |
STP9N60M2 CAD Models
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STP9N60M2 Part Data Attributes
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STP9N60M2
STMicroelectronics
Buy Now
Datasheet
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STP9N60M2
STMicroelectronics
Power Field-Effect Transistor, 5.5A I(D), 600V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | To-220, 3 Pin | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Avalanche Energy Rating (Eas) | 105 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 0.78 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 0.68 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 60 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
STP9N60M2 Frequently Asked Questions (FAQ)
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The maximum operating frequency of the STP9N60M2 is typically around 100 kHz, but it can be used up to 1 MHz with proper gate drive and layout considerations.
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To minimize switching losses, ensure a fast rise and fall time of the gate signal (typically <10 ns), and use a gate driver with a high current capability (e.g., 1-2 A) to quickly charge and discharge the gate capacitance.
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The recommended gate resistance for the STP9N60M2 is typically in the range of 10-20 ohms, but this can vary depending on the specific application and PCB layout.
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To handle thermal management, ensure good heat sinking, use a thermal interface material (TIM) with a high thermal conductivity, and consider using a heat sink with a thermal resistance of <1°C/W.
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The maximum allowed voltage transient for the STP9N60M2 is typically around 650 V, but this can vary depending on the specific application and PCB layout. It's recommended to use a voltage clamp or snubber circuit to limit voltage transients.