| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STP9NC60 vs IPB80N06S2LH5ATMA1 |
| NDB706AL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | STP9NC60 vs NDB706AL |
| IXFH7N90Q | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | STP9NC60 vs IXFH7N90Q |
| FQA48N20 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 48A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP9NC60 vs FQA48N20 |
| STP13NK50Z | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 11A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STP9NC60 vs STP13NK50Z |
| STH8NA60FI | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 5A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | STP9NC60 vs STH8NA60FI |
| FQA17N40 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP9NC60 vs FQA17N40 |
| SSS7N60B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP9NC60 vs SSS7N60B |
| BUK465-60A | NXP Semiconductors | Check for Price | Power Field-Effect Transistor, 41A I(D), 60V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP9NC60 vs BUK465-60A |
| FQPF4N90 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 900V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STP9NC60 vs FQPF4N90 |
Part Details for STP9NC60 by STMicroelectronics
Results Overview of STP9NC60 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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STP9NC60 Information
STP9NC60 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STP9NC60
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 9A I(D), 600V, 0.75OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 48 |
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$2.7000 / $5.4000 | Buy Now |
STP9NC60 Part Data Attributes
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STP9NC60
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STP9NC60
STMicroelectronics
Power Field-Effect Transistor, 9A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | To-220, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 850 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.75 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 31 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STP9NC60
This table gives cross-reference parts and alternative options found for STP9NC60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STP9NC60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STP9NC60 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) of the STP9NC60 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive power dissipation or thermal stress.
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To ensure the STP9NC60 is properly biased for optimal performance, follow the recommended biasing conditions outlined in the datasheet, including the gate-source voltage (Vgs) and drain-source voltage (Vds) ratings. Additionally, consider the device's threshold voltage (Vth) and ensure that the gate drive voltage is sufficient to fully enhance the device.
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For optimal thermal management, it's recommended to use a PCB layout that provides good thermal conductivity and heat dissipation. This can include using a thermal pad or heat sink, and ensuring that the device is mounted on a thick copper layer. Additionally, consider using thermal vias to dissipate heat from the device to the PCB's thermal layers.
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To protect the STP9NC60 from electrostatic discharge (ESD) and other forms of electrical overstress, follow proper handling and storage procedures, such as using ESD-safe materials and equipment, and ensuring that the device is properly grounded during handling and assembly. Additionally, consider using ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit design.
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The reliability and lifetime expectations of the STP9NC60 are dependent on various factors, including the operating conditions, environmental factors, and manufacturing quality. According to the datasheet, the device is designed to meet certain reliability standards, such as AEC-Q101. However, it's recommended to consult with STMicroelectronics or a qualified reliability engineer to determine the expected lifetime and reliability of the device in a specific application.