Part Details for STRHMF16N20ST by STMicroelectronics
Results Overview of STRHMF16N20ST by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (0 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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STRHMF16N20ST Information
STRHMF16N20ST by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STRHMF16N20ST
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
STRHMF16N20ST
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Avnet Americas | - Bulk (Alt: STRHMF16N20ST) COO: France RoHS: Not Compliant Min Qty: 6 Package Multiple: 6 Container: Bulk | 0 |
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RFQ |
US Tariff Estimator: STRHMF16N20ST by STMicroelectronics
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
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STRHMF16N20ST Part Data Attributes
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STRHMF16N20ST
STMicroelectronics
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Datasheet
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STRHMF16N20ST
STMicroelectronics
Power Field-Effect Transistor, 16A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | High Reliability | |
| Avalanche Energy Rating (Eas) | 120 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.09 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 3 Pf | |
| JESD-30 Code | R-XBCC-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Unspecified | |
| Package Shape | Rectangular | |
| Package Style | Chip Carrier | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation Ambient-Max | 66 W | |
| Pulsed Drain Current-Max (IDM) | 64 A | |
| Reference Standard | Esa/Scc 5205/034; Rh - 100k Rad(Si); Mil-Std-750e | |
| Surface Mount | Yes | |
| Terminal Form | No Lead | |
| Terminal Position | Bottom | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 458 Ns | |
| Turn-on Time-Max (ton) | 27 Ns |