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N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in IPAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
06X3751
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Newark | Hv Mosfet Mdmesh |Stmicroelectronics STU6N60M2 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
497-13978-5-ND
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DigiKey | MOSFET N-CH 600V 4.5A IPAK Min Qty: 1 Lead time: 16 Weeks Container: Tube |
4 In Stock |
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$0.4997 / $1.3300 | Buy Now |
DISTI #
STU6N60M2
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Avnet Americas | Trans MOSFET N-CH 600V 4.5A 3-Pin IPAK Tube - Rail/Tube (Alt: STU6N60M2) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Tube | 0 |
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$0.5566 / $0.5806 | Buy Now |
DISTI #
511-STU6N60M2
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Mouser Electronics | MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2 RoHS: Compliant | 1403 |
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$0.4990 / $1.3300 | Buy Now |
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STMicroelectronics | N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in IPAK package RoHS: Compliant Min Qty: 1 | 1403 |
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$0.7000 / $1.3000 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 | 0 |
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$0.5320 | Buy Now |
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Bristol Electronics | 2550 |
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RFQ | ||
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Bristol Electronics | 2117 |
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RFQ | ||
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Quest Components | 2040 |
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$1.0440 / $2.7840 | Buy Now | |
DISTI #
STU6N60M2
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EBV Elektronik | Trans MOSFET N-CH 600V 4.5A 3-Pin IPAK Tube (Alt: STU6N60M2) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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STU6N60M2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STU6N60M2
STMicroelectronics
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in IPAK package
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | IPAK-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 86 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 4.5 A | |
Drain-source On Resistance-Max | 1.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 0.7 pF | |
JEDEC-95 Code | TO-251 | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STU6N60M2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STU6N60M2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
STP6N60M2 | N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in TO-220 package | STMicroelectronics | STU6N60M2 vs STP6N60M2 |