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Transistors / Small Signal Field-Effect Transistors / TP0606N3-G-P002
Datasheets
TP0606N3-G-P002 by: Microchip Technology Inc

MOSFET P-CH 60V 320MA TO92-3

Part Details for TP0606N3-G-P002 by Microchip Technology Inc

Overview of TP0606N3-G-P002 by Microchip Technology Inc

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Available Datasheets

Part # Manufacturer Description Datasheet
MP-64RJ45UNNP-002 Amphenol Cables on Demand Amphenol MP-64RJ45UNNP-002 Cat6 UTP Patch Cable (550-MHz) with Snagless RJ45 Connectors - Purple 2ft
7312P0025A13LF Amphenol Communications Solutions Smart Card, Input Output Connectors, IC Chip Card Connector, 8 contacts, Surface Mount, Open Type.

Price & Stock for TP0606N3-G-P002

Part # Distributor Description Stock Price Buy
DISTI # 53Y4266
Newark Mosfet, P-Channel Enhancement-Mode, -60V, 3.5 Ohm 3 To-92 Rvt/R Rohs Compliant: Yes |Microchip TP0606N3-G-P002 RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 100 $0.9380
$0.9380 Buy Now
DISTI # TP0606N3-G-P002-ND
DigiKey MOSFET P-CH 60V 320MA TO92-3 Min Qty: 2000 Lead time: 7 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 2,000 $0.9100
$0.9100 Buy Now
DISTI # TP0606N3-G-P002
Avnet Americas Trans MOSFET P-CH 60V 0.32A 3-Pin TO-92 T/R - Tape and Reel (Alt: TP0606N3-G-P002) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 7 Weeks, 0 Days Container: Reel 0
  • 1 $1.2200
  • 25 $1.0100
  • 100 $0.9100
$0.9100 / $1.2200 Buy Now
DISTI # 689-TP0606N3-G-P002
Mouser Electronics MOSFETs P-CH Enhancmnt Mode MOSFET RoHS: Compliant 1962
  • 1 $1.2200
  • 25 $1.0100
  • 100 $0.9560
  • 250 $0.9100
  • 1,000 $0.8540
  • 2,000 $0.8540
  • 4,000 $0.8450
$0.8450 / $1.2200 Buy Now
DISTI # TP0606N3-G-P002
Microchip Technology Inc MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V, 3.5 Ohm, Projected EOL: 2034-05-07 RoHS: Compliant pbFree: Yes 12000

Alternates Available
  • 1 $1.2200
  • 25 $1.0100
  • 100 $0.9100
  • 1,000 $0.7700
  • 5,000 $0.7100
$0.7100 / $1.2200 Buy Now
DISTI # 70483880
RS MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V, 3.5 Ohm3 TO-92 RVT/R | Microchip Technology Inc. TP0606N3-G-P002 RoHS: Not Compliant Min Qty: 2000 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Bulk 0
  • 2,000 $0.9200
  • 20,000 $0.8700
  • 100,000 $0.8300
  • 200,000 $0.7800
$0.7800 / $0.9200 RFQ
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 0
  • 2,000 $0.6140
$0.6140 Buy Now
Onlinecomponents.com   RoHS: Compliant 12000 Factory Stock
  • 2,000 $0.5960
  • 4,000 $0.5870
  • 6,000 $0.5730
  • 8,000 $0.5650
  • 10,000 $0.5560
  • 16,000 $0.5480
$0.5480 / $0.5960 Buy Now
DISTI # TP0606N3-G-P002
TME Transistor: P-MOSFET, unipolar, -60V, -320mA, Idm: -3.5A, 1W, TO92 Min Qty: 1 0
  • 1 $0.9900
  • 5 $0.8900
  • 25 $0.7800
  • 100 $0.7000
  • 500 $0.6600
  • 2,000 $0.6300
$0.6300 / $0.9900 RFQ
NAC MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V, 3.5 Ohm - Package: 3 TO-92 RVT/R RoHS: Compliant Min Qty: 1 Package Multiple: 2000 10000
  • 1 $0.7100
  • 100 $0.6400
  • 500 $0.5900
  • 1,000 $0.5700
$0.5700 / $0.7100 Buy Now
DISTI # TP0606N3-G-P002
Avnet Silica Trans MOSFET P-CH 60V 0.32A 3-Pin TO-92 T/R (Alt: TP0606N3-G-P002) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 9 Weeks, 0 Days Silica - 0
Buy Now
Master Electronics   RoHS: Compliant 12000 Factory Stock
  • 2,000 $0.5960
  • 4,000 $0.5870
  • 6,000 $0.5730
  • 8,000 $0.5650
  • 10,000 $0.5560
  • 16,000 $0.5480
$0.5480 / $0.5960 Buy Now

Part Details for TP0606N3-G-P002

TP0606N3-G-P002 CAD Models

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TP0606N3-G-P002 Part Data Attributes

Parametric Data
TP0606N3-G-P002 Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
TP0606N3-G-P002 Microchip Technology Inc MOSFET P-CH 60V 320MA TO92-3
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 7 Weeks
Samacsys Manufacturer Microchip
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.32 A
Drain-source On Resistance-Max 3.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 35 pF
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1 W
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for TP0606N3-G-P002

This table gives cross-reference parts and alternative options found for TP0606N3-G-P002. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TP0606N3-G-P002, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
TP0606N3P016 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc TP0606N3-G-P002 vs TP0606N3P016
TP0606N3P014 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc TP0606N3-G-P002 vs TP0606N3P014
TP0606N3P002 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc TP0606N3-G-P002 vs TP0606N3P002
TP0606N3P008 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc TP0606N3-G-P002 vs TP0606N3P008
TP0606N3P018 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc TP0606N3-G-P002 vs TP0606N3P018
TP0606N3P001 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc TP0606N3-G-P002 vs TP0606N3P001
TP0606N3P012 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc TP0606N3-G-P002 vs TP0606N3P012
TP0606N3P011 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc TP0606N3-G-P002 vs TP0606N3P011
TP0606N3 Small Signal Field-Effect Transistor, 0.32A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, Supertex Inc TP0606N3-G-P002 vs TP0606N3
TP0606N3P004 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc TP0606N3-G-P002 vs TP0606N3P004
Part Number Description Manufacturer Compare
TP0606N3P002 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc TP0606N3-G-P002 vs TP0606N3P002
TP0606N3P018 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc TP0606N3-G-P002 vs TP0606N3P018
TP0606N3P008 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc TP0606N3-G-P002 vs TP0606N3P008
TP0606N3P005 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc TP0606N3-G-P002 vs TP0606N3P005
TP0606N3P012 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc TP0606N3-G-P002 vs TP0606N3P012
TP0606N3 Small Signal Field-Effect Transistor, 0.32A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, Supertex Inc TP0606N3-G-P002 vs TP0606N3
TP0606N3P007 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc TP0606N3-G-P002 vs TP0606N3P007
TP0606N3P013 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc TP0606N3-G-P002 vs TP0606N3P013
TP0606N3P016 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc TP0606N3-G-P002 vs TP0606N3P016
TP0606N2 Small Signal Field-Effect Transistor, 1A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Supertex Inc TP0606N3-G-P002 vs TP0606N2

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