Part Details for TPIC5401DWR by Texas Instruments
Results Overview of TPIC5401DWR by Texas Instruments
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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TPIC5401DWR Information
TPIC5401DWR by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for TPIC5401DWR
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.35ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-013AC | 4749 |
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RFQ |
US Tariff Estimator: TPIC5401DWR by Texas Instruments
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
TPIC5401DWR Part Data Attributes
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TPIC5401DWR
Texas Instruments
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Datasheet
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TPIC5401DWR
Texas Instruments
Power Field-Effect Transistor, 1.7A I(D), 60V, 0.35ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-013AC
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| Part Life Cycle Code | Obsolete | |
| Part Package Code | SOIC | |
| Package Description | Ms-013, 20 Pin | |
| Pin Count | 20 | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | Esd Protected | |
| Avalanche Energy Rating (Eas) | 21 Mj | |
| Configuration | Complex | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 1.7 A | |
| Drain-source On Resistance-Max | 0.35 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 125 Pf | |
| JEDEC-95 Code | MS-013AC | |
| JESD-30 Code | R-PDSO-G20 | |
| Number of Elements | 4 | |
| Number of Terminals | 20 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation Ambient-Max | 1.389 W | |
| Power Dissipation-Max (Abs) | 1.389 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 130 Ns | |
| Turn-on Time-Max (ton) | 95 Ns |