There are no models available for this part yet.
Overview of V436516Y04VTG-10PC by Mosel Vitelic Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| EP610PC-35 | Rochester Electronics LLC | OT PLD, 37ns, CMOS, PDIP24, PLASTIC, DIP-24 | |
| EP610PC-30 | Rochester Electronics LLC | OT PLD, 32ns, CMOS, PDIP24, PLASTIC, DIP-24 | |
| 25S10PC | Rochester Electronics LLC | Replacement for AMD part number AM25S10PC. Buy from authorized manufacturer Rochester Electronics. |
CAD Models for V436516Y04VTG-10PC by Mosel Vitelic Corporation
Part Data Attributes for V436516Y04VTG-10PC by Mosel Vitelic Corporation
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|
|
|---|---|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
MOSEL-VITELIC
|
|
Part Package Code
|
MODULE
|
|
Package Description
|
DIMM, DIMM144,32
|
|
Pin Count
|
144
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.32
|
|
Access Mode
|
FOUR BANK PAGE BURST
|
|
Access Time-Max
|
6 ns
|
|
Clock Frequency-Max (fCLK)
|
100 MHz
|
|
I/O Type
|
COMMON
|
|
JESD-30 Code
|
R-XDMA-N144
|
|
Memory Density
|
1073741824 bit
|
|
Memory IC Type
|
SYNCHRONOUS DRAM MODULE
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|
Memory Width
|
64
|
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Number of Functions
|
1
|
|
Number of Ports
|
1
|
|
Number of Terminals
|
144
|
|
Number of Words
|
16777216 words
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|
Number of Words Code
|
16000000
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Operating Mode
|
SYNCHRONOUS
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|
Operating Temperature-Max
|
70 °C
|
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Operating Temperature-Min
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|
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Organization
|
16MX64
|
|
Output Characteristics
|
3-STATE
|
|
Package Body Material
|
UNSPECIFIED
|
|
Package Code
|
DIMM
|
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Package Equivalence Code
|
DIMM144,32
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
MICROELECTRONIC ASSEMBLY
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|
Qualification Status
|
Not Qualified
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|
Refresh Cycles
|
4096
|
|
Standby Current-Max
|
0.03 A
|
|
Supply Current-Max
|
0.88 mA
|
|
Supply Voltage-Max (Vsup)
|
3.6 V
|
|
Supply Voltage-Min (Vsup)
|
3 V
|
|
Supply Voltage-Nom (Vsup)
|
3.3 V
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|
Surface Mount
|
NO
|
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Technology
|
CMOS
|
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Temperature Grade
|
COMMERCIAL
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Terminal Form
|
NO LEAD
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Terminal Pitch
|
0.8 mm
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Terminal Position
|
DUAL
|
Alternate Parts for V436516Y04VTG-10PC
This table gives cross-reference parts and alternative options found for V436516Y04VTG-10PC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V436516Y04VTG-10PC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT4LSDT1664LHY-13EXX | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, LEAD FREE, SODIMM-144 | Micron Technology Inc | V436516Y04VTG-10PC vs MT4LSDT1664LHY-13EXX |
| M464S1654DTS-L1H | Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 | Samsung Semiconductor | V436516Y04VTG-10PC vs M464S1654DTS-L1H |
| THLY6416G1FG-75L | IC 16M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, ZMA144, SODIMM-144, Dynamic RAM | Toshiba America Electronic Components | V436516Y04VTG-10PC vs THLY6416G1FG-75L |
| HB52D168DC-B6FL | Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-144 | Hitachi Ltd | V436516Y04VTG-10PC vs HB52D168DC-B6FL |
| M464S1724ETS-C7A | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 | Samsung Semiconductor | V436516Y04VTG-10PC vs M464S1724ETS-C7A |
| MT8LSDT1664HG-10EXX | Synchronous DRAM Module, 16MX64, 6ns, CMOS, SODIMM-144 | Micron Technology Inc | V436516Y04VTG-10PC vs MT8LSDT1664HG-10EXX |
| M466S1723BT2-L10 | Synchronous DRAM Module, 16MX64, 7ns, CMOS, 1.150 INCH HEIGHT, SODIMM-144 | Samsung Semiconductor | V436516Y04VTG-10PC vs M466S1723BT2-L10 |
| MT8LSDT1664HY-133XX | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, LEAD FREE, SODIMM-144 | Micron Technology Inc | V436516Y04VTG-10PC vs MT8LSDT1664HY-133XX |
| WED3DG6416V75D1 | Synchronous DRAM Module, 16MX64, CMOS, SODIMM-144 | Microsemi Corporation | V436516Y04VTG-10PC vs WED3DG6416V75D1 |
| EBS12UC6APS-7A | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 | Elpida Memory Inc | V436516Y04VTG-10PC vs EBS12UC6APS-7A |