Datasheets
V54C3256164VDS7IPC by: ProMOS Technologies Inc

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA60, MO-210, FBGA-60

Part Details for V54C3256164VDS7IPC by ProMOS Technologies Inc

Overview of V54C3256164VDS7IPC by ProMOS Technologies Inc

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Applications Computing and Data Storage Financial Technology (Fintech)

Part Details for V54C3256164VDS7IPC

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V54C3256164VDS7IPC Part Data Attributes:

V54C3256164VDS7IPC ProMOS Technologies Inc
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V54C3256164VDS7IPC ProMOS Technologies Inc Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA60, MO-210, FBGA-60
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer PROMOS TECHNOLOGIES INC
Part Package Code BGA
Package Description TFBGA, BGA60,8X15,32
Pin Count 60
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 143 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B60
JESD-609 Code e0
Length 13 mm
Memory Density 268435456 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA60,8X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.001 A
Supply Current-Max 0.2 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN LEAD
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for V54C3256164VDS7IPC

This table gives cross-reference parts and alternative options found for V54C3256164VDS7IPC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V54C3256164VDS7IPC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
V54C3256164VDJ7I Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA60, GREEN, MO-210, FBGA-60 ProMOS Technologies Inc V54C3256164VDS7IPC vs V54C3256164VDJ7I
V54C3256164VDS7I Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA60, MO-210, FBGA-60 ProMOS Technologies Inc V54C3256164VDS7IPC vs V54C3256164VDS7I
V54C3256164VDF7IPC Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA60, ROHS COMPLIANT, MO-210, FBGA-60 ProMOS Technologies Inc V54C3256164VDS7IPC vs V54C3256164VDF7IPC
V54C3256164VDF7I Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA60, ROHS COMPLIANT, MO-210, FBGA-60 ProMOS Technologies Inc V54C3256164VDS7IPC vs V54C3256164VDF7I
Part Number Description Manufacturer Compare
MT48LC8M16A2BB-7EL Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA60, 8 X 16 MM, LEAD FREE, PLASTIC, FBGA-60 Micron Technology Inc V54C3256164VDS7IPC vs MT48LC8M16A2BB-7EL
V58C2256164SCLJ5BI DDR DRAM, 16MX16, 0.65ns, CMOS, PBGA60, GREEN, MO-233, FBGA-60 ProMOS Technologies Inc V54C3256164VDS7IPC vs V58C2256164SCLJ5BI
V58C2256164SCLS45 DDR DRAM, 16MX16, 0.65ns, CMOS, PBGA60, MO-233, FBGA-60 ProMOS Technologies Inc V54C3256164VDS7IPC vs V58C2256164SCLS45
MT46V16M16BJ-75ZLHIT DDR DRAM, 16MX16, 0.75ns, CMOS, PBGA60, 16 X 9 MM, PLASTIC, FBGA-60 Micron Technology Inc V54C3256164VDS7IPC vs MT46V16M16BJ-75ZLHIT
MT46V16M16FJ-6LITH 16MX16 DDR DRAM, 0.7ns, PBGA60, 16 X 9 MM, PLASTIC, FBGA-60 Micron Technology Inc V54C3256164VDS7IPC vs MT46V16M16FJ-6LITH
MT46V8M16BJ-75ELIT DDR DRAM, 8MX16, 0.75ns, CMOS, PBGA60, 16 X 9 MM, LEAD FREE, PLASTIC, FBGA-60 Micron Technology Inc V54C3256164VDS7IPC vs MT46V8M16BJ-75ELIT
K4H561638F-ZCB3T DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 Samsung Semiconductor V54C3256164VDS7IPC vs K4H561638F-ZCB3T
V58C2256164SALZ-7 DDR DRAM, 16MX16, 0.75ns, CMOS, PBGA60, M0-233, DIE-STACKED, FBGA-60 ProMOS Technologies Inc V54C3256164VDS7IPC vs V58C2256164SALZ-7
MT46V8M16BJ-75:A DDR DRAM, 8MX16, 0.75ns, CMOS, PBGA60, 16 X 9 MM, LEAD FREE, FBGA-60 Micron Technology Inc V54C3256164VDS7IPC vs MT46V8M16BJ-75:A
IS43R16800D-4BLI Synchronous DRAM, 8MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-60 Integrated Silicon Solution Inc V54C3256164VDS7IPC vs IS43R16800D-4BLI

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