| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| VNB20N07TR-E | STMicroelectronics | $2.7178 | Power Field-Effect Transistor, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | VNB20N07 vs VNB20N07TR-E |
| VNB20N0713TR | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | VNB20N07 vs VNB20N0713TR |
Part Details for VNB20N07 by STMicroelectronics
Results Overview of VNB20N07 by STMicroelectronics
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (2 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (1 option)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
VNB20N07 Information
VNB20N07 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for VNB20N07
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-2794-5-ND
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DigiKey | IC PWR DRIVER N-CHAN 1:1 D2PAK Container: Tube |
0 Tube |
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Buy Now | |
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Bristol Electronics | Current Limit SW 1-IN 1-OUT to 18V 28A Automotive AEC-Q100 3-Pin(2+Tab) D2PAK Tube | 20 |
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RFQ | |
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Chip Stock | Power Switch Lo Side 14A 3-Pin(2+Tab) D2PAK Tube | 3500 |
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RFQ | |
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Vyrian | Power Field-Effect Transistor, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | 9378 |
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RFQ | |
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Win Source Electronics | ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET | MOSFET N-CH 70V 20A D2PAK | 2000 |
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$2.4436 / $3.6654 | Buy Now |
VNB20N07 Part Data Attributes
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VNB20N07
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
VNB20N07
STMicroelectronics
Power Field-Effect Transistor, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | D2PAK | |
| Package Description | D2pak-3/2 | |
| Pin Count | 4 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 100 Mj | |
| Configuration | Complex | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 0.5 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 83 W | |
| Pulsed Drain Current-Max (IDM) | 1.3 A | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 1100 Ns | |
| Turn-on Time-Max (ton) | 580 Ns |
Alternate Parts for VNB20N07
This table gives cross-reference parts and alternative options found for VNB20N07. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VNB20N07, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
VNB20N07 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) of the VNB20N07 is not explicitly stated in the datasheet. However, STMicroelectronics provides a SPICE model that can be used to simulate the device's behavior and determine the SOA. Additionally, the device's thermal resistance and maximum junction temperature can be used to estimate the SOA.
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To ensure the VNB20N07 is properly biased, follow the recommended biasing scheme in the datasheet. This typically involves connecting the gate to a voltage source through a resistor, and the source to a voltage source or ground through a resistor. The specific biasing scheme may vary depending on the application and desired performance.
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The recommended PCB layout and thermal management for the VNB20N07 involve using a thermally efficient layout, such as a copper pour or thermal vias, to dissipate heat. The device should be placed on a thick copper layer, and thermal interfaces, such as thermal tape or thermal grease, should be used to improve heat transfer. The datasheet provides guidelines for thermal management, and STMicroelectronics also provides application notes and reference designs that can be used as a starting point.
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To protect the VNB20N07 from electrostatic discharge (ESD), follow standard ESD protection practices, such as using ESD-safe handling and storage procedures, and incorporating ESD protection devices, such as TVS diodes or ESD protection arrays, into the circuit design. The datasheet provides information on the device's ESD sensitivity and recommended protection methods.
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The reliability and lifetime expectations of the VNB20N07 are not explicitly stated in the datasheet. However, STMicroelectronics provides reliability data and qualification reports for the device, which can be used to estimate its reliability and lifetime. Additionally, the device's operating conditions, such as temperature and voltage, can affect its reliability and lifetime.