Part Details for VP2206N2 by Supertex Inc
Overview of VP2206N2 by Supertex Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for VP2206N2
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | MOSFET Transistor, P-Channel, TO-39 | 3 |
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$14.4480 / $15.4800 | Buy Now |
Part Details for VP2206N2
VP2206N2 CAD Models
VP2206N2 Part Data Attributes
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VP2206N2
Supertex Inc
Buy Now
Datasheet
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Compare Parts:
VP2206N2
Supertex Inc
Small Signal Field-Effect Transistor, 0.75A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, GREEN TO-39, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SUPERTEX INC | |
| Part Package Code | TO-39 | |
| Package Description | GREEN TO-39, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | HIGH INPUT IMPEDANCE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.75 A | |
| Drain-source On Resistance-Max | 0.9 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 40 pF | |
| JEDEC-95 Code | TO-39 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e4 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 6 W | |
| Power Dissipation-Max (Abs) | 6 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | GOLD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for VP2206N2
This table gives cross-reference parts and alternative options found for VP2206N2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VP2206N2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TP2104N3-G | Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 | Supertex Inc | VP2206N2 vs TP2104N3-G |
| VN2110K1-G | Small Signal Field-Effect Transistor, 0.2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SAME AS SOT-23, 3 PIN | Supertex Inc | VP2206N2 vs VN2110K1-G |
| MMBF170 | Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN | Fairchild Semiconductor Corporation | VP2206N2 vs MMBF170 |
| TN0606N3-G | Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 | Supertex Inc | VP2206N2 vs TN0606N3-G |
| BSS123,215 | BSS123 - N-channel TrenchMOS logic level FET TO-236 3-Pin | NXP Semiconductors | VP2206N2 vs BSS123,215 |
| TN5325N3-G | Small Signal Field-Effect Transistor, 0.215A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 | Supertex Inc | VP2206N2 vs TN5325N3-G |
| 2N7002 | 300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3 | NXP Semiconductors | VP2206N2 vs 2N7002 |
| 2N7002,215 | 2N7002 - 60 V, 300 mA N-channel Trench MOSFET TO-236 3-Pin | NXP Semiconductors | VP2206N2 vs 2N7002,215 |
| BST82,235 | BST82 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin | NXP Semiconductors | VP2206N2 vs BST82,235 |
| VP0210N5 | Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Supertex Inc | VP2206N2 vs VP0210N5 |