Part Details for ZVN2106E by Zetex / Diodes Inc
Overview of ZVN2106E by Zetex / Diodes Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for ZVN2106E
ZVN2106E CAD Models
ZVN2106E Part Data Attributes
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ZVN2106E
Zetex / Diodes Inc
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Datasheet
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ZVN2106E
Zetex / Diodes Inc
Power Field-Effect Transistor, 0.45A I(D), 60V, 2ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ZETEX PLC | |
| Package Description | IN-LINE, R-PDIP-T14 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SEPARATE, 4 ELEMENTS | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.45 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDIP-T14 | |
| JESD-609 Code | e0 | |
| Number of Elements | 4 | |
| Number of Terminals | 14 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.85 W | |
| Pulsed Drain Current-Max (IDM) | 3 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for ZVN2106E
This table gives cross-reference parts and alternative options found for ZVN2106E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZVN2106E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| VQ1004J | Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 | Supertex Inc | ZVN2106E vs VQ1004J |
| VQ1000J | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | ZVN2106E vs VQ1000J |
| ZVN3306E | 0.27A, 60V, 5ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14 | Diodes Incorporated | ZVN2106E vs ZVN3306E |
| VQ1000P | Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Temic Semiconductors | ZVN2106E vs VQ1000P |
| VQ1000N6 | Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 | Supertex Inc | ZVN2106E vs VQ1000N6 |
| VQ1004J | Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Temic Semiconductors | ZVN2106E vs VQ1004J |
| VQ1001P | Power Field-Effect Transistor, 0.53A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Temic Semiconductors | ZVN2106E vs VQ1001P |
| RBVQ1000N7 | Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED, CERAMIC, DIP-14 | Supertex Inc | ZVN2106E vs RBVQ1000N7 |
| ZVN4206E | Power Field-Effect Transistor, 0.6A I(D), 60V, 1.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 | Zetex / Diodes Inc | ZVN2106E vs ZVN4206E |
| VQ1004P | Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-14 | Vishay Intertechnologies | ZVN2106E vs VQ1004P |