Part Details for VS12G422TDC-6 by Vitesse Semiconductor Corporation
Overview of VS12G422TDC-6 by Vitesse Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for VS12G422TDC-6
VS12G422TDC-6 CAD Models
VS12G422TDC-6 Part Data Attributes
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VS12G422TDC-6
Vitesse Semiconductor Corporation
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Datasheet
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VS12G422TDC-6
Vitesse Semiconductor Corporation
Cache SRAM, 256X4, 6ns, MOS, CDIP22, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-22
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VITESSE SEMICONDUCTOR CORP | |
| Part Package Code | DIP | |
| Package Description | DIP, DIP22,.4 | |
| Pin Count | 22 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 6 ns | |
| I/O Type | SEPARATE | |
| JESD-30 Code | R-CDIP-T22 | |
| JESD-609 Code | e0 | |
| Length | 28 mm | |
| Memory Density | 1024 bit | |
| Memory IC Type | CACHE SRAM | |
| Memory Width | 4 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 22 | |
| Number of Words | 256 words | |
| Number of Words Code | 256 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 256X4 | |
| Output Characteristics | 3-STATE | |
| Output Enable | YES | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Code | DIP | |
| Package Equivalence Code | DIP22,.4 | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 4.064 mm | |
| Supply Current-Max | 0.3 mA | |
| Supply Voltage-Max (Vsup) | 5.25 V | |
| Supply Voltage-Min (Vsup) | 4.75 V | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| Surface Mount | NO | |
| Technology | MOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Pitch | 2.54 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for VS12G422TDC-6
This table gives cross-reference parts and alternative options found for VS12G422TDC-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VS12G422TDC-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AM91L01BDCB | Standard SRAM, 256X4, 400ns, MOS, CDIP22, HERMETIC SEALED, CERAMIC, DIP-22 | AMD | VS12G422TDC-6 vs AM91L01BDCB |
| M38510/23115BWB | 256X4 STANDARD SRAM, 55ns, DIP22, 0.375 X 0.875 INCH, DIP-22 | Texas Instruments | VS12G422TDC-6 vs M38510/23115BWB |
| AM91L01ADM | Standard SRAM, 256X4, 500ns, NMOS, CDIP22, HERMETIC SEALED, SIDE BRAZED, DIP-22 | AMD | VS12G422TDC-6 vs AM91L01ADM |
| C2101A-4 | Standard SRAM, 256X4, 400ns, MOS, CDIP22, HERMETIC SEALED, CERAMIC, DIP-22 | AMD | VS12G422TDC-6 vs C2101A-4 |
| AM91L01A/DMC | Standard SRAM, 256X4, 500ns, MOS, CDIP22, HERMETIC SEALED, CERAMIC, DIP-22 | AMD | VS12G422TDC-6 vs AM91L01A/DMC |
| MAC5101CS | Standard SRAM, 256X4, 130ns, CMOS, CDIP22 | Dynex Semiconductor | VS12G422TDC-6 vs MAC5101CS |
| P4C422-10PI | Standard SRAM, 256X4, 10ns, CMOS, PDIP22, PLASTIC, DIP-22 | Pyramid Semiconductor Corporation | VS12G422TDC-6 vs P4C422-10PI |
| 5962-8859403WA | Standard SRAM, 256X4, 25ns, CMOS, CDIP22, 0.400 INCH, CERDIP-22 | Cypress Semiconductor | VS12G422TDC-6 vs 5962-8859403WA |
| AM93L412ADC | Standard SRAM, 256X4, 45ns, TTL, CDIP22, HERMETIC SEALED, CERAMIC, DIP-22 | AMD | VS12G422TDC-6 vs AM93L412ADC |
| MAL5101CC | Standard SRAM, 256X4, 130ns, CMOS, CDIP22 | Dynex Semiconductor | VS12G422TDC-6 vs MAL5101CC |