Part Details for W3EG6418S263D3 by Microsemi Corporation
Overview of W3EG6418S263D3 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for W3EG6418S263D3
W3EG6418S263D3 CAD Models
W3EG6418S263D3 Part Data Attributes
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W3EG6418S263D3
Microsemi Corporation
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Datasheet
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W3EG6418S263D3
Microsemi Corporation
DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | DIMM | |
| Package Description | DIMM, | |
| Pin Count | 184 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.75 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-XDMA-N184 | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 184 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX64 | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL |
Alternate Parts for W3EG6418S263D3
This table gives cross-reference parts and alternative options found for W3EG6418S263D3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W3EG6418S263D3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| W3EG6418S202JD3 | DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 | Microsemi Corporation | W3EG6418S263D3 vs W3EG6418S202JD3 |
| M368L1713DTL-CB0 | DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | W3EG6418S263D3 vs M368L1713DTL-CB0 |
| MT16VDDT1664AG-265A1 | DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 | Micron Technology Inc | W3EG6418S263D3 vs MT16VDDT1664AG-265A1 |
| HYS64D16001HU-8-B | DDR DRAM Module, 16MX64, 0.8ns, CMOS, DIMM-184 | Infineon Technologies AG | W3EG6418S263D3 vs HYS64D16001HU-8-B |
| MT4VDDT1664AG-265XX | DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 | Micron Technology Inc | W3EG6418S263D3 vs MT4VDDT1664AG-265XX |
| M368L1624DTM-CB3 | DDR DRAM Module, 16MX64, 0.7ns, CMOS, DIMM-184 | Samsung Semiconductor | W3EG6418S263D3 vs M368L1624DTM-CB3 |
| HYS64D16301GU-6-C | DDR DRAM Module, 16MX64, 0.7ns, CMOS, LEAD FREE, DIMM-184 | Infineon Technologies AG | W3EG6418S263D3 vs HYS64D16301GU-6-C |
| V826616J24SXTG-B1 | DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 | Mosel Vitelic Corporation | W3EG6418S263D3 vs V826616J24SXTG-B1 |
| MT8VDDT1664AG-202A1 | DDR DRAM Module, 16MX64, 0.8ns, CMOS, DIMM-184 | Micron Technology Inc | W3EG6418S263D3 vs MT8VDDT1664AG-202A1 |
| M368L1713CTL-LB3 | DDR DRAM Module, 16MX64, 0.7ns, CMOS, DIMM-184 | Samsung Semiconductor | W3EG6418S263D3 vs M368L1713CTL-LB3 |