Datasheets
W989D6CBGX7E by: Winbond Electronics Corp

DDR DRAM, 32MX16, 5.4ns, CMOS, PBGA54, 8 X 9 MM, 0.80 MM PITCH, HALOGEN AND LEAD FREE, VFBGA-54

Part Details for W989D6CBGX7E by Winbond Electronics Corp

Overview of W989D6CBGX7E by Winbond Electronics Corp

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W989D6CBGX7E Part Data Attributes

W989D6CBGX7E Winbond Electronics Corp
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W989D6CBGX7E Winbond Electronics Corp DDR DRAM, 32MX16, 5.4ns, CMOS, PBGA54, 8 X 9 MM, 0.80 MM PITCH, HALOGEN AND LEAD FREE, VFBGA-54
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer WINBOND ELECTRONICS CORP
Part Package Code BGA
Package Description 8 X 9 MM, 0.80 MM PITCH, HALOGEN AND LEAD FREE, VFBGA-54
Pin Count 54
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B54
Length 9 mm
Memory Density 536870912 bit
Memory IC Type DDR DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -25 °C
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA54,9X9,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.025 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.00001 A
Supply Current-Max 0.075 mA
Supply Voltage-Max (Vsup) 1.95 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 8 mm

Alternate Parts for W989D6CBGX7E

This table gives cross-reference parts and alternative options found for W989D6CBGX7E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W989D6CBGX7E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4M511533E-YC750 Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, 0.80 MM PITCH, FBGA-54 Samsung Semiconductor W989D6CBGX7E vs K4M511533E-YC750
MT48V32M16LFFN-75 Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, 10 X 12.50 MM, VFBGA-54 Micron Technology Inc W989D6CBGX7E vs MT48V32M16LFFN-75
K4M511633E-PL1H0 Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 Samsung Semiconductor W989D6CBGX7E vs K4M511633E-PL1H0
K4S51153LC-YS1L Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, CSP-54 Samsung Semiconductor W989D6CBGX7E vs K4S51153LC-YS1L
K4M51163LC-BG1H0 Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 Samsung Semiconductor W989D6CBGX7E vs K4M51163LC-BG1H0
IS45VM16320D-75BLA2 Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, 8 X 13 MM, LEAD FREE, MS-207, TFBGA-54 Integrated Silicon Solution Inc W989D6CBGX7E vs IS45VM16320D-75BLA2
K4S511633F-PC750 Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, LEAD FREE, FBGA-54 Samsung Semiconductor W989D6CBGX7E vs K4S511633F-PC750
IS45S16320B-6BLA1 Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, 11 X 13 MM, 0.80 MM PITCH, ROHS COMPLIANT, WBGA-54 Integrated Silicon Solution Inc W989D6CBGX7E vs IS45S16320B-6BLA1
K4S511533C-YP80 Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, CSP-54 Samsung Semiconductor W989D6CBGX7E vs K4S511533C-YP80
K4M511633E-YC1H0 Synchronous DRAM, 32MX16, 7ns, CMOS, PBGA54, FBGA-54 Samsung Semiconductor W989D6CBGX7E vs K4M511633E-YC1H0

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