There are no models available for this part yet.
Overview of WED3EG6418SL262D3 by Microsemi Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for WED3EG6418SL262D3 by Microsemi Corporation
Part Data Attributes for WED3EG6418SL262D3 by Microsemi Corporation
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|---|---|
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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MICROSEMI CORP
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Part Package Code
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DIMM
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Package Description
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DIMM,
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Pin Count
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184
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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HTS Code
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8542.32.00.32
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Access Mode
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FOUR BANK PAGE BURST
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Additional Feature
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AUTO/SELF REFRESH
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JESD-30 Code
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R-XDMA-N184
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Memory Density
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1073741824 bit
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Memory IC Type
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DDR DRAM MODULE
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Memory Width
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64
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Number of Functions
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1
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Number of Ports
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1
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Number of Terminals
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184
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Number of Words
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16777216 words
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Number of Words Code
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16000000
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Operating Mode
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SYNCHRONOUS
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Operating Temperature-Max
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70 °C
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Operating Temperature-Min
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Organization
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16MX64
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Package Body Material
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UNSPECIFIED
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Package Code
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DIMM
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Package Shape
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RECTANGULAR
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Package Style
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MICROELECTRONIC ASSEMBLY
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Qualification Status
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Not Qualified
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Self Refresh
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YES
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Supply Voltage-Max (Vsup)
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2.7 V
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Supply Voltage-Min (Vsup)
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2.3 V
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Supply Voltage-Nom (Vsup)
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2.5 V
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Surface Mount
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NO
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Technology
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CMOS
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Temperature Grade
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COMMERCIAL
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Terminal Form
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NO LEAD
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Terminal Position
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DUAL
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Alternate Parts for WED3EG6418SL262D3
This table gives cross-reference parts and alternative options found for WED3EG6418SL262D3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of WED3EG6418SL262D3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NT128D64SH4B1G-5T | DDR DRAM Module, 16MX64, 0.65ns, CMOS, DIMM-184 | Nanya Technology Corporation | WED3EG6418SL262D3 vs NT128D64SH4B1G-5T |
| V826616J24SAIZ-A1 | DDR DRAM Module, 16MX64, 0.55ns, CMOS, LEAD FREE, DIMM-184 | ProMOS Technologies Inc | WED3EG6418SL262D3 vs V826616J24SAIZ-A1 |
| M368L1713ETM-LC4 | DDR DRAM Module, 16MX64, 0.65ns, CMOS, DIMM-184 | Samsung Semiconductor | WED3EG6418SL262D3 vs M368L1713ETM-LC4 |
| M368L1714BT1-CA0 | DDR DRAM Module, 16MX64, 0.8ns, CMOS, DIMM-184 | Samsung Semiconductor | WED3EG6418SL262D3 vs M368L1714BT1-CA0 |
| M368L1713ETM-CCC | DDR DRAM Module, 16MX64, 0.65ns, CMOS, DIMM-184 | Samsung Semiconductor | WED3EG6418SL262D3 vs M368L1713ETM-CCC |
| MT4VDDT1664AY-202XX | DDR DRAM Module, 16MX64, 0.8ns, CMOS, MO-206, DIMM-184 | Micron Technology Inc | WED3EG6418SL262D3 vs MT4VDDT1664AY-202XX |
| HYMD116645BL8-H | DDR DRAM Module, 16MX64, 0.75ns, CMOS, 5.250 X 1.250 X 0.150 INCH, DIMM-184 | SK Hynix Inc | WED3EG6418SL262D3 vs HYMD116645BL8-H |
| M368L1713BT0-CA2 | DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | WED3EG6418SL262D3 vs M368L1713BT0-CA2 |
| HYMD216646AL6J-J | DDR DRAM Module, 16MX64, 0.7ns, CMOS, DIMM-184 | SK Hynix Inc | WED3EG6418SL262D3 vs HYMD216646AL6J-J |
| M368L1624DTL-LA2 | DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | WED3EG6418SL262D3 vs M368L1624DTL-LA2 |