Part Details for RBVQ1000N7 by Supertex Inc
Overview of RBVQ1000N7 by Supertex Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Automotive
Part Details for RBVQ1000N7
RBVQ1000N7 CAD Models
RBVQ1000N7 Part Data Attributes:
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RBVQ1000N7
Supertex Inc
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Datasheet
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RBVQ1000N7
Supertex Inc
Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED, CERAMIC, DIP-14
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SUPERTEX INC | |
| Part Package Code | DIP | |
| Package Description | IN-LINE, R-CDIP-T14 | |
| Pin Count | 14 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.225 A | |
| Drain-source On Resistance-Max | 5.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JESD-30 Code | R-CDIP-T14 | |
| Number of Elements | 4 | |
| Number of Terminals | 14 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 1 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 10 ns | |
| Turn-on Time-Max (ton) | 10 ns |
Alternate Parts for RBVQ1000N7
This table gives cross-reference parts and alternative options found for RBVQ1000N7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RBVQ1000N7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| VQ1004J | Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Temic Semiconductors | RBVQ1000N7 vs VQ1004J |
| ZVN3306E | Power Field-Effect Transistor, 0.27A I(D), 60V, 5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 | Zetex / Diodes Inc | RBVQ1000N7 vs ZVN3306E |
| VQ1000P | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | RBVQ1000N7 vs VQ1000P |
| VQ1004P | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | RBVQ1000N7 vs VQ1004P |
| VN3205P-G | Power Field-Effect Transistor, 1.5A I(D), 50V, 0.3ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-001, GREEN, MS-001AA, 14 PIN | Supertex Inc | RBVQ1000N7 vs VN3205P-G |
| ZVN4206E | Power Field-Effect Transistor, 0.6A I(D), 60V, 1.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 | Zetex / Diodes Inc | RBVQ1000N7 vs ZVN4206E |
| VQ1004P | Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-14 | Vishay Intertechnologies | RBVQ1000N7 vs VQ1004P |
| VQ1004P | Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED PACKAGE-14 | Temic Semiconductors | RBVQ1000N7 vs VQ1004P |
| ZVN2106E | Power Field-Effect Transistor, 0.45A I(D), 60V, 2ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 | Zetex / Diodes Inc | RBVQ1000N7 vs ZVN2106E |
| VQ1001J | Power Field-Effect Transistor, 0.83A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Temic Semiconductors | RBVQ1000N7 vs VQ1001J |