Datasheets
AFV09P350-04GNR3 by:

RF POWER, FET

Part Details for AFV09P350-04GNR3 by NXP Semiconductors

Overview of AFV09P350-04GNR3 by NXP Semiconductors

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for AFV09P350-04GNR3

Part # Distributor Description Stock Price Buy
DISTI # 44X7191
Newark Airfast Rf Power Ldmos Transistor, 720-960 Mhz, 100 W Avg., 48 V/ Reel Rohs Compliant: Yes |Nxp AFV09P350-04GNR3 Min Qty: 250 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 25 $206.1300
$206.1300 Buy Now
DISTI # AFV09P350-04GNR3-ND
DigiKey RF MOSFET LDMOS 48V OM780G-4 Min Qty: 250 Lead time: 10 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 250 $203.4174
$203.4174 Buy Now
DISTI # AFV09P350-04GNR3
Avnet Americas Power LDMOS Transistor N-Channel 105V 4-Pin OM-780G T/R - Tape and Reel (Alt: AFV09P350-04GNR3) RoHS: Compliant Min Qty: 250 Package Multiple: 250 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 250 $225.0054
  • 500 $220.2850
  • 1,000 $213.9911
  • 1,500 $210.8442
  • 2,000 $206.1238
  • 2,500 $201.4034
  • 25,000 $195.1095
$195.1095 / $225.0054 Buy Now
DISTI # 841-AFV09P350-04GNR3
Mouser Electronics RF MOSFET Transistors 720-960 MHz 100 W AVG. 48 V RoHS: Compliant 0
  • 250 $203.4100
$203.4100 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 250 Package Multiple: 250 Container: Reel 0
Reel
  • 250 $191.8900
$191.8900 Buy Now
DISTI # AFV09P350-04GNR3
Avnet Americas Power LDMOS Transistor N-Channel 105V 4-Pin OM-780G T/R - Tape and Reel (Alt: AFV09P350-04GNR3) RoHS: Compliant Min Qty: 250 Package Multiple: 250 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 250 $225.0054
  • 500 $220.2850
  • 1,000 $213.9911
  • 1,500 $210.8442
  • 2,000 $206.1238
  • 2,500 $201.4034
  • 25,000 $195.1095
$195.1095 / $225.0054 Buy Now
DISTI # AFV09P350-04GNR
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 250 0
  • 250 $210.6200
$210.6200 Buy Now
DISTI # 4275291
Farnell   RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $365.9788
$365.9788 Buy Now

Part Details for AFV09P350-04GNR3

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AFV09P350-04GNR3 Part Data Attributes:

AFV09P350-04GNR3 NXP Semiconductors
Buy Now Datasheet
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AFV09P350-04GNR3 NXP Semiconductors RF POWER, FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NXP SEMICONDUCTORS
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00
Factory Lead Time 10 Weeks
Samacsys Manufacturer NXP
Configuration SEPARATE, 2 ELEMENTS
DS Breakdown Voltage-Min 105 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 225 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 18.5 dB
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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