Datasheets
ARF466FL by:

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Part Details for ARF466FL by Microchip Technology Inc

Overview of ARF466FL by Microchip Technology Inc

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Applications Telecommunications

Price & Stock for ARF466FL

Part # Distributor Description Stock Price Buy
DISTI # 78AH6301
Newark Rf Mosfet (Vdmos) 1000 V 300 W 45 Mhz T2 T2 Pizza Box Rohs Compliant: Yes |Microchip ARF466FL Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $148.7900
  • 100 $125.9100
  • 250 $120.1800
  • 500 $116.9200
$116.9200 / $148.7900 Buy Now
DISTI # ARF466FL-ND
DigiKey RF MOSFET 150V T3 Min Qty: 10 Lead time: 47 Weeks Container: Bulk Temporarily Out of Stock
  • 10 $148.7910
$148.7910 Buy Now
DISTI # ARF466FL
Avnet Americas RF Power MOSFET N-Channel 1000V 13A 45MHz 6-Pin Case T3 - Boxed Product (Development Kits) (Alt: ARF466FL) RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Lead time: 47 Weeks, 0 Days Container: Box 0
  • 1 $148.7900
  • 100 $125.9100
  • 250 $120.1800
  • 500 $116.9200
$116.9200 / $148.7900 Buy Now
DISTI # 494-ARF466FL
Mouser Electronics RF MOSFET Transistors RF MOSFET (VDMOS) 1000 V 300 W 45 MHz T2 RoHS: Compliant 0
  • 10 $148.7900
$148.7900 Order Now
DISTI # ARF466FL
Microchip Technology Inc RF MOSFET (VDMOS) 1000 V 300 W 45 MHz T2, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $148.7900
  • 100 $125.9100
  • 250 $120.1800
  • 500 $116.9200
  • 1,000 $113.6400
  • 5,000 $108.7500
$108.7500 / $148.7900 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 1 0
  • 10 $109.0000
$109.0000 Buy Now
Onlinecomponents.com Trans RF FET N-CH 1000V 13A 6-Pin T3 Box 23 Factory Stock
  • 3 $136.2500
  • 5 $122.6200
  • 8 $107.3000
  • 10 $105.1500
$105.1500 / $136.2500 Buy Now
DISTI # ARF466FL
Avnet Americas RF Power MOSFET N-Channel 1000V 13A 45MHz 6-Pin Case T3 - Boxed Product (Development Kits) (Alt: ARF466FL) RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Lead time: 47 Weeks, 0 Days Container: Box 0
  • 1 $148.7900
  • 100 $125.9100
  • 250 $120.1800
  • 500 $116.9200
$116.9200 / $148.7900 Buy Now
NAC FG, MOSFET, 1000V, T3 RoHS: Compliant Min Qty: 3 Package Multiple: 1 Container: Box 0
  • 1 $116.7900
  • 100 $107.5700
  • 500 $102.1900
  • 800 $99.7000
$99.7000 / $116.7900 Buy Now
DISTI # ARF466FL
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 10 0
  • 10 $112.2700
  • 50 $109.3600
  • 100 $107.9500
$107.9500 / $112.2700 Buy Now
Master Electronics Trans RF FET N-CH 1000V 13A 6-Pin T3 Box 23 Factory Stock
  • 3 $136.2500
  • 5 $122.6200
  • 8 $107.3000
  • 10 $105.1500
$105.1500 / $136.2500 Buy Now

Part Details for ARF466FL

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ARF466FL Part Data Attributes:

ARF466FL Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
ARF466FL Microchip Technology Inc RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 47 Weeks
Case Connection SOURCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 13 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F6
JESD-609 Code e0
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for ARF466FL

This table gives cross-reference parts and alternative options found for ARF466FL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ARF466FL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
ARF466FLG RF Power Field-Effect Transistor Microsemi Corporation ARF466FL vs ARF466FLG
ARF466FL RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC PACKAGE-6 Microsemi Corporation ARF466FL vs ARF466FL
Part Number Description Manufacturer Compare
ARF466FLG RF Power Field-Effect Transistor Microsemi Corporation ARF466FL vs ARF466FLG
ARF466AG RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-264AA Microchip Technology Inc ARF466FL vs ARF466AG
ARF466A RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Microsemi Corporation ARF466FL vs ARF466A
ARF466BG RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Microsemi Corporation ARF466FL vs ARF466BG
ARF466FL RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC PACKAGE-6 Microsemi Corporation ARF466FL vs ARF466FL

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