Datasheets
AS4C8M16D1A-5TINTR by: Alliance Memory Inc

IC SDRAM 128MBIT 200MHZ 66TSOP

Part Details for AS4C8M16D1A-5TINTR by Alliance Memory Inc

Overview of AS4C8M16D1A-5TINTR by Alliance Memory Inc

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Applications Consumer Electronics Computing and Data Storage

Price & Stock for AS4C8M16D1A-5TINTR

Part # Distributor Description Stock Price Buy
DISTI # 85AK7152
Newark Ddr1, 128Mb, 8M X 16, 2.5V, 66Pin Tsop Ii, 200 Mhz, Industriall Temp A Die, T&r |Alliance Memory AS4C8M16D1A-5TINTR RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $3.7000
  • 5,000 $3.6000
$3.6000 / $3.7000 Buy Now
DISTI # AS4C8M16D1A-5TINTR-ND
DigiKey IC DRAM 128MBIT PAR 66TSOP II Min Qty: 1000 Lead time: 8 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 1,000 $2.8945
$2.8945 Buy Now
DISTI # AS4C8M16D1A-5TINTR
Avnet Americas DRAM Chip DDR1 SDRAM 128Mbit 8M X 16 66-Pin TSOP-II T/R - Tape and Reel (Alt: AS4C8M16D1A-5TINTR) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 1,000 $2.3310
$2.3310 Buy Now
DISTI # 913-4C8M16D1A-5TINTR
Mouser Electronics DRAM DDR1, 128Mb, 8M x 16, 2.5V, 66pin TSOP II, 200 MHz, Industriall Temp A Die, T&R RoHS: Compliant 0
  • 1,000 $2.8000
$2.8000 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks Container: Reel 0
Reel
  • 1,000 $2.3200
$2.3200 Buy Now

Part Details for AS4C8M16D1A-5TINTR

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AS4C8M16D1A-5TINTR Part Data Attributes

AS4C8M16D1A-5TINTR Alliance Memory Inc
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AS4C8M16D1A-5TINTR Alliance Memory Inc IC SDRAM 128MBIT 200MHZ 66TSOP
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALLIANCE MEMORY INC
Package Description TSOP2, TSSOP66,.46
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Factory Lead Time 8 Weeks
Samacsys Manufacturer Alliance Memory
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 8MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.005 A
Standby Voltage-Min 2.3 V
Supply Current-Max 0.14 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for AS4C8M16D1A-5TINTR

This table gives cross-reference parts and alternative options found for AS4C8M16D1A-5TINTR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4C8M16D1A-5TINTR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AS4C8M16D1A-5TIN DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, TSOPII-66 Alliance Memory Inc AS4C8M16D1A-5TINTR vs AS4C8M16D1A-5TIN
Part Number Description Manufacturer Compare
NT5DS8M16IS-5TI DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, TSOP2-66 Nanya Technology Corporation AS4C8M16D1A-5TINTR vs NT5DS8M16IS-5TI
EM6A9160TSC-4G DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, TSOPII-66 Etron Technology Inc AS4C8M16D1A-5TINTR vs EM6A9160TSC-4G
W9412G6JH-6 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 Winbond Electronics Corp AS4C8M16D1A-5TINTR vs W9412G6JH-6
W9412G6JH-5I DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 Winbond Electronics Corp AS4C8M16D1A-5TINTR vs W9412G6JH-5I
KM416L8031BT-GY0 DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, TSOP2-66 Samsung Semiconductor AS4C8M16D1A-5TINTR vs KM416L8031BT-GY0
KM416L8031BT-FY0 DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, TSOP2-66 Samsung Semiconductor AS4C8M16D1A-5TINTR vs KM416L8031BT-FY0
W94124G6KH-5I DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 Winbond Electronics Corp AS4C8M16D1A-5TINTR vs W94124G6KH-5I
M13S128168A-6TG2N DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Elite Semiconductor Memory Technology Inc AS4C8M16D1A-5TINTR vs M13S128168A-6TG2N
EM6A9160BKC-4H DDR DRAM, 8MX16, 0.7ns, CMOS, PBGA60, FBGA-60 Etron Technology Inc AS4C8M16D1A-5TINTR vs EM6A9160BKC-4H
KM416L8031BT-FZ0 DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, TSOP2-66 Samsung Semiconductor AS4C8M16D1A-5TINTR vs KM416L8031BT-FZ0

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