Part Details for AUIRF6218STRL by Infineon Technologies AG
Overview of AUIRF6218STRL by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for AUIRF6218STRL
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP001517990
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EBV Elektronik | Trans MOSFET P-CH 150V 27A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001517990) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 5 Weeks, 5 Days | EBV - 0 |
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Part Details for AUIRF6218STRL
AUIRF6218STRL CAD Models
AUIRF6218STRL Part Data Attributes:
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AUIRF6218STRL
Infineon Technologies AG
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Datasheet
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AUIRF6218STRL
Infineon Technologies AG
Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | D2PAK-3/2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 27 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRF6218STRL
This table gives cross-reference parts and alternative options found for AUIRF6218STRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF6218STRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF6218STRR | Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | AUIRF6218STRL vs IRF6218STRR |
| IRF6218STRRPBF | Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | AUIRF6218STRL vs IRF6218STRRPBF |
| IRF6218SPBF | Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | AUIRF6218STRL vs IRF6218SPBF |
| AUIRF6218S | Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 | Infineon Technologies AG | AUIRF6218STRL vs AUIRF6218S |
| IRF6218S | Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | AUIRF6218STRL vs IRF6218S |
| IRF6218STRLPBF | Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | AUIRF6218STRL vs IRF6218STRLPBF |
| IRF6218STRRPBF | Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | AUIRF6218STRL vs IRF6218STRRPBF |
| IRF6218STRRHR | Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3/2 | International Rectifier | AUIRF6218STRL vs IRF6218STRRHR |
| IRF6218STRRHR | Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3/2 | Infineon Technologies AG | AUIRF6218STRL vs IRF6218STRRHR |
| IRF6218STRL | Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | AUIRF6218STRL vs IRF6218STRL |