Datasheets
BS817 by:

Small Signal Field-Effect Transistor, 0.1A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for BS817 by Lite-On Semiconductor Corporation

Overview of BS817 by Lite-On Semiconductor Corporation

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Part Details for BS817

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BS817 Part Data Attributes:

BS817 Lite-On Semiconductor Corporation
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BS817 Lite-On Semiconductor Corporation Small Signal Field-Effect Transistor, 0.1A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Obsolete
Ihs Manufacturer LITE-ON SEMICONDUCTOR CORP
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH INPUT IMPEDANCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 0.1 A
Drain-source On Resistance-Max 50 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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