Parametric results for: BS817 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH INPUT IMPEDANCE 1

4 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 1

4 hits Apply

DS Breakdown Voltage-Min (1)

200 V 3

4 hits Apply

Drain Current-Max (ID) (1)

100 mA 4

4 hits Apply

Drain-source On Resistance-Max (1)

50 Ω 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PDSO-G3 3

4 hits Apply

Manufacturer (2)

Diodes Incorporated 3 Lite-On Semiconductor Corporation 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 3

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Active 1 Obsolete 3

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 4

4 hits Apply

310 mW 1

4 hits Apply

310 mW 1

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply