Part Details for BSC160N10NS3G by Infineon Technologies AG
Overview of BSC160N10NS3G by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC160N10NS3G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
73928878
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RS | Transistor, MOSFET, N-channel, 8.8A, 100V, 150C, 16mOhm, TDSON8EP | Infineon BSC160N10NS3G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 10 |
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$0.7000 / $0.8300 | Buy Now |
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Ameya Holding Limited | Min Qty: 10 | 70020 |
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$1.1541 / $1.1901 | Buy Now |
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CHIPMALL.COM LIMITED | 100V 42A 60W 16m@10V,33A 3.5V@33uA N Channel TDSON-8-EP5x6 MOSFETs ROHS | 4506 |
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$0.4727 / $0.7892 | Buy Now |
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LCSC | 100V 42A 60W 16m10V33A 3.5V33uA 1PCSNChannel TDSON-8-EP(5x6) MOSFETs ROHS | 4506 |
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$0.4823 / $0.8053 | Buy Now |
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Sense Electronic Company Limited | DFN | 982 |
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RFQ | |
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Win Source Electronics | OptiMOS3 Power-Transistor | 209500 |
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$0.5000 / $0.7490 | Buy Now |
Part Details for BSC160N10NS3G
BSC160N10NS3G CAD Models
BSC160N10NS3G Part Data Attributes
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BSC160N10NS3G
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC160N10NS3G
Infineon Technologies AG
Power Field-Effect Transistor, 8.8A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TDSON-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 8.8 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 60 W | |
| Pulsed Drain Current-Max (IDM) | 168 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC160N10NS3G
This table gives cross-reference parts and alternative options found for BSC160N10NS3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC160N10NS3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC152N10NSFGATMA1 | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC160N10NS3G vs BSC152N10NSFGATMA1 |
| BSC152N10NSFG | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC160N10NS3G vs BSC152N10NSFG |